JPS5518052B2 - - Google Patents
Info
- Publication number
- JPS5518052B2 JPS5518052B2 JP7163875A JP7163875A JPS5518052B2 JP S5518052 B2 JPS5518052 B2 JP S5518052B2 JP 7163875 A JP7163875 A JP 7163875A JP 7163875 A JP7163875 A JP 7163875A JP S5518052 B2 JPS5518052 B2 JP S5518052B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50071638A JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50071638A JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51147186A JPS51147186A (en) | 1976-12-17 |
| JPS5518052B2 true JPS5518052B2 (en, 2012) | 1980-05-16 |
Family
ID=13466379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50071638A Granted JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147186A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313876U (en, 2012) * | 1986-07-15 | 1988-01-29 | ||
| JPH01254545A (ja) * | 1988-03-31 | 1989-10-11 | Dainippon Printing Co Ltd | 金属蓋付容器 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
| JPS6115369A (ja) * | 1984-07-02 | 1986-01-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製造方法 |
| SE461490B (sv) * | 1987-08-24 | 1990-02-19 | Asea Ab | Mos-transistor utbildad paa ett isolerande underlag |
| JP2507567B2 (ja) * | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ |
| US5264721A (en) * | 1989-04-29 | 1993-11-23 | Fujitsu Limited | Insulated-gate FET on an SOI-structure |
| JP2519541B2 (ja) * | 1989-09-06 | 1996-07-31 | 三菱電機株式会社 | 半導体装置 |
-
1975
- 1975-06-12 JP JP50071638A patent/JPS51147186A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313876U (en, 2012) * | 1986-07-15 | 1988-01-29 | ||
| JPH01254545A (ja) * | 1988-03-31 | 1989-10-11 | Dainippon Printing Co Ltd | 金属蓋付容器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51147186A (en) | 1976-12-17 |