JPS55162942U - - Google Patents

Info

Publication number
JPS55162942U
JPS55162942U JP1979062674U JP6267479U JPS55162942U JP S55162942 U JPS55162942 U JP S55162942U JP 1979062674 U JP1979062674 U JP 1979062674U JP 6267479 U JP6267479 U JP 6267479U JP S55162942 U JPS55162942 U JP S55162942U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1979062674U
Other languages
Japanese (ja)
Other versions
JPS6032761Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1979062674U priority Critical patent/JPS6032761Y2/ja
Priority to DE8080900836T priority patent/DE3069784D1/de
Priority to US06/227,075 priority patent/US4389967A/en
Priority to PCT/JP1980/000099 priority patent/WO1980002622A1/ja
Publication of JPS55162942U publication Critical patent/JPS55162942U/ja
Priority to EP80900836A priority patent/EP0028266B1/en
Application granted granted Critical
Publication of JPS6032761Y2 publication Critical patent/JPS6032761Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • C30B31/103Mechanisms for moving either the charge or heater

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP1979062674U 1979-05-11 1979-05-11 石英ボ−ト Expired JPS6032761Y2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1979062674U JPS6032761Y2 (ja) 1979-05-11 1979-05-11 石英ボ−ト
DE8080900836T DE3069784D1 (en) 1979-05-11 1980-05-09 Boat for conveying semiconductor substrates
US06/227,075 US4389967A (en) 1979-05-11 1980-05-09 Boat for carrying semiconductor substrates
PCT/JP1980/000099 WO1980002622A1 (en) 1979-05-11 1980-05-09 Boat for conveying semiconductor substrates
EP80900836A EP0028266B1 (en) 1979-05-11 1980-12-01 Boat for conveying semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1979062674U JPS6032761Y2 (ja) 1979-05-11 1979-05-11 石英ボ−ト

Publications (2)

Publication Number Publication Date
JPS55162942U true JPS55162942U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-11-22
JPS6032761Y2 JPS6032761Y2 (ja) 1985-09-30

Family

ID=13207060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1979062674U Expired JPS6032761Y2 (ja) 1979-05-11 1979-05-11 石英ボ−ト

Country Status (5)

Country Link
US (1) US4389967A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0028266B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6032761Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3069784D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1980002622A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540326A (en) * 1982-09-17 1985-09-10 Nacom Industries, Inc. Semiconductor wafer transport system
US4682927A (en) * 1982-09-17 1987-07-28 Nacom Industries, Incorporated Conveyor system
US4461617A (en) * 1982-10-25 1984-07-24 Asq Boats, Inc. Carrier for semiconductors
US4428975A (en) 1983-01-28 1984-01-31 Motorola, Inc. Process for improving nitride deposition on a semiconductor wafer
US4515104A (en) * 1983-05-13 1985-05-07 Asq Boats, Inc. Contiguous wafer boat
US4486465A (en) * 1983-09-30 1984-12-04 Motorola, Inc. Method for deposition on a semiconductor wafer
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
KR890702241A (ko) * 1987-07-02 1989-12-23 스탄 게이어 경질 삽입체를 넣은 보강 캐리어(Reinforced Carrier with Embedded Rigid Insert)
US4930634A (en) * 1987-09-29 1990-06-05 Fluoroware, Inc. Carrier for flat panel displays
US4949848A (en) * 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
DE4019611A1 (de) * 1990-06-20 1992-01-02 Schaefer Franz W Transporteinheit fuer leiterplatten
US5111936A (en) * 1990-11-30 1992-05-12 Fluoroware Wafer carrier
JP2787914B2 (ja) * 1996-06-27 1998-08-20 日本電気株式会社 半導体ウェーハの保管方法及び保管容器
US6468903B2 (en) 2000-11-15 2002-10-22 Asm International N.V. Pre-treatment of reactor parts for chemical vapor deposition reactors
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US9067792B1 (en) 2006-11-03 2015-06-30 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified granular forms
US10211326B2 (en) * 2016-03-31 2019-02-19 Stmicroelectronics (Tours) Sas Vertical power component

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
US4089735A (en) * 1968-06-05 1978-05-16 Siemens Aktiengesellschaft Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
JPS4944509Y1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-01-27 1974-12-05
US3640398A (en) * 1970-03-30 1972-02-08 Edward J Mellen Jr Wafer boat
US3705714A (en) * 1971-05-20 1972-12-12 Norton Co Silicon nitride kiln furniture
JPS5140424A (ja) * 1975-07-09 1976-04-05 Teijin Ltd Chukukanjogatafukugoseni
JPS52135063U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-04-09 1977-10-14

Also Published As

Publication number Publication date
EP0028266B1 (en) 1984-12-12
EP0028266A1 (en) 1981-05-13
JPS6032761Y2 (ja) 1985-09-30
DE3069784D1 (en) 1985-01-24
EP0028266A4 (en) 1981-08-27
US4389967A (en) 1983-06-28
WO1980002622A1 (en) 1980-11-27

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