JPS5514539B2 - - Google Patents
Info
- Publication number
- JPS5514539B2 JPS5514539B2 JP15661676A JP15661676A JPS5514539B2 JP S5514539 B2 JPS5514539 B2 JP S5514539B2 JP 15661676 A JP15661676 A JP 15661676A JP 15661676 A JP15661676 A JP 15661676A JP S5514539 B2 JPS5514539 B2 JP S5514539B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7539963A FR2337432A1 (fr) | 1975-12-29 | 1975-12-29 | Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5283080A JPS5283080A (en) | 1977-07-11 |
JPS5514539B2 true JPS5514539B2 (fr) | 1980-04-17 |
Family
ID=9164256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15661676A Granted JPS5283080A (en) | 1975-12-29 | 1976-12-27 | Ic and method of producing same |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5283080A (fr) |
AU (1) | AU506891B2 (fr) |
CH (1) | CH609489A5 (fr) |
DE (1) | DE2657822A1 (fr) |
FR (1) | FR2337432A1 (fr) |
GB (1) | GB1571621A (fr) |
NL (1) | NL7614383A (fr) |
SE (1) | SE7614560L (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5470781A (en) * | 1977-11-16 | 1979-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
US4338622A (en) * | 1979-06-29 | 1982-07-06 | International Business Machines Corporation | Self-aligned semiconductor circuits and process therefor |
US4539742A (en) * | 1981-06-22 | 1985-09-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
NL7107040A (fr) * | 1971-05-22 | 1972-11-24 | ||
DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
US3904450A (en) * | 1974-04-26 | 1975-09-09 | Bell Telephone Labor Inc | Method of fabricating injection logic integrated circuits using oxide isolation |
-
1975
- 1975-12-29 FR FR7539963A patent/FR2337432A1/fr active Granted
-
1976
- 1976-12-21 DE DE19762657822 patent/DE2657822A1/de active Granted
- 1976-12-24 NL NL7614383A patent/NL7614383A/xx not_active Application Discontinuation
- 1976-12-24 AU AU20909/76A patent/AU506891B2/en not_active Expired
- 1976-12-24 GB GB54060/76A patent/GB1571621A/en not_active Expired
- 1976-12-27 CH CH1636176A patent/CH609489A5/xx not_active IP Right Cessation
- 1976-12-27 JP JP15661676A patent/JPS5283080A/ja active Granted
- 1976-12-27 SE SE7614560A patent/SE7614560L/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2657822C2 (fr) | 1989-10-05 |
FR2337432B1 (fr) | 1979-06-22 |
AU506891B2 (en) | 1980-01-24 |
CH609489A5 (en) | 1979-02-28 |
JPS5283080A (en) | 1977-07-11 |
GB1571621A (en) | 1980-07-16 |
NL7614383A (nl) | 1977-07-01 |
DE2657822A1 (de) | 1977-07-07 |
AU2090976A (en) | 1978-06-29 |
FR2337432A1 (fr) | 1977-07-29 |
SE7614560L (sv) | 1977-06-30 |