JPS55145369A - Charge regenerater for charge coupled element and driving method of the same - Google Patents

Charge regenerater for charge coupled element and driving method of the same

Info

Publication number
JPS55145369A
JPS55145369A JP5268779A JP5268779A JPS55145369A JP S55145369 A JPS55145369 A JP S55145369A JP 5268779 A JP5268779 A JP 5268779A JP 5268779 A JP5268779 A JP 5268779A JP S55145369 A JPS55145369 A JP S55145369A
Authority
JP
Japan
Prior art keywords
charge
unit
bias
transfer
transfer direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5268779A
Other languages
Japanese (ja)
Inventor
Eiichi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5268779A priority Critical patent/JPS55145369A/en
Publication of JPS55145369A publication Critical patent/JPS55145369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To regenerate charge without deteriorating its transfer efficiency and to enable altering of charge transfer direction by forming a signal charge detector, a resetting unit and a bias charge injecting unit adjacent to a transfer direction converter. CONSTITUTION:A reset pulse is applied to the terminal 32 of a resetting unit 27 to fix the potential of a transfer direction converter 24 to constant, and a pulse is applied to the terminal 36 of a bias charge injecting unit 28 to retain the predetermined amount of bias charge in a bias charge storage unit 37. Thereafter, a signal charge is transferred from n-th transfer channel 1 to the transfer direction converter 24 to detect the signal charge by a signal charge detector 26. Then, a pulse is applied to the terminal 36 of the unit 28 to inject the bias charge retained in the unit 37 into the converter 24, and the signal charge is regenerated at (n+1)th transfer channel 2.
JP5268779A 1979-04-27 1979-04-27 Charge regenerater for charge coupled element and driving method of the same Pending JPS55145369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5268779A JPS55145369A (en) 1979-04-27 1979-04-27 Charge regenerater for charge coupled element and driving method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5268779A JPS55145369A (en) 1979-04-27 1979-04-27 Charge regenerater for charge coupled element and driving method of the same

Publications (1)

Publication Number Publication Date
JPS55145369A true JPS55145369A (en) 1980-11-12

Family

ID=12921791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5268779A Pending JPS55145369A (en) 1979-04-27 1979-04-27 Charge regenerater for charge coupled element and driving method of the same

Country Status (1)

Country Link
JP (1) JPS55145369A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6157053A (en) * 1997-05-26 2000-12-05 Nec Corporation Charge transfer device and method of driving the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6157053A (en) * 1997-05-26 2000-12-05 Nec Corporation Charge transfer device and method of driving the same

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