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Priority to JP4899376ApriorityCriticalpatent/JPS52130576A/ja
Publication of JPS52130576ApublicationCriticalpatent/JPS52130576A/ja
Publication of JPS5513586B2publicationCriticalpatent/JPS5513586B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs