JPS55132964U - - Google Patents
Info
- Publication number
- JPS55132964U JPS55132964U JP1979032576U JP3257679U JPS55132964U JP S55132964 U JPS55132964 U JP S55132964U JP 1979032576 U JP1979032576 U JP 1979032576U JP 3257679 U JP3257679 U JP 3257679U JP S55132964 U JPS55132964 U JP S55132964U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979032576U JPS55132964U (en。) | 1979-03-14 | 1979-03-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979032576U JPS55132964U (en。) | 1979-03-14 | 1979-03-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55132964U true JPS55132964U (en。) | 1980-09-20 |
Family
ID=28886333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1979032576U Pending JPS55132964U (en。) | 1979-03-14 | 1979-03-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55132964U (en。) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021228A (en。) * | 1973-06-27 | 1975-03-06 | ||
JPS5069974A (en。) * | 1973-09-25 | 1975-06-11 | ||
JPS5193673A (en。) * | 1975-02-14 | 1976-08-17 | ||
JPS5316585A (en) * | 1976-07-29 | 1978-02-15 | Mitsubishi Electric Corp | Semiconductor device |
-
1979
- 1979-03-14 JP JP1979032576U patent/JPS55132964U/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021228A (en。) * | 1973-06-27 | 1975-03-06 | ||
JPS5069974A (en。) * | 1973-09-25 | 1975-06-11 | ||
JPS5193673A (en。) * | 1975-02-14 | 1976-08-17 | ||
JPS5316585A (en) * | 1976-07-29 | 1978-02-15 | Mitsubishi Electric Corp | Semiconductor device |