JPS55132088A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55132088A
JPS55132088A JP3907379A JP3907379A JPS55132088A JP S55132088 A JPS55132088 A JP S55132088A JP 3907379 A JP3907379 A JP 3907379A JP 3907379 A JP3907379 A JP 3907379A JP S55132088 A JPS55132088 A JP S55132088A
Authority
JP
Japan
Prior art keywords
insulating material
heat insulating
window
dusts
contamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3907379A
Other languages
Japanese (ja)
Other versions
JPS6152998B2 (en
Inventor
Masaaki Ishii
Naoto Kawamura
Koichi Sakugi
Haruo Uchiyama
Isao Hakamata
Takashi Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP3907379A priority Critical patent/JPS55132088A/en
Publication of JPS55132088A publication Critical patent/JPS55132088A/en
Publication of JPS6152998B2 publication Critical patent/JPS6152998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent invasion and contamination of a semiconductor laser device by dusts by a construction wherein, within a closed space defined by closure members such as a cap, base or the like, a path of beam between a laser element and optical window is formed as the second closed space. CONSTITUTION:A resilient heat insulating material 2 is disposed inside of a metallic cap 3. The heat insulating material 2 has a cylindrical form with cavities of diameters D1, D2, as well as a conical cavity corresponding to an optic window. A slit for receiving terminal members 5a, 5b of the laser structure is formed in a portion of the heat insulating material, at a right angle to the base. The path of beam from the laser element 4 to the window 1 is thus closed completely and, accordingly, free from contamination by dusts. The scrubbing of the pellet element during assembling of the device, as well as cleaning after soldering, is unnecessary.
JP3907379A 1979-03-30 1979-03-30 Semiconductor laser device Granted JPS55132088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3907379A JPS55132088A (en) 1979-03-30 1979-03-30 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3907379A JPS55132088A (en) 1979-03-30 1979-03-30 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS55132088A true JPS55132088A (en) 1980-10-14
JPS6152998B2 JPS6152998B2 (en) 1986-11-15

Family

ID=12542936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3907379A Granted JPS55132088A (en) 1979-03-30 1979-03-30 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55132088A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123037A (en) * 1983-12-08 1985-07-01 Toshiba Corp Die-bonding device
JP2004288742A (en) * 2003-03-19 2004-10-14 Sumitomo Electric Ind Ltd Optical module
CN109586165A (en) * 2019-01-25 2019-04-05 维沃移动通信有限公司 A kind of mode of laser group and electronic equipment
JP7036286B1 (en) * 2021-05-11 2022-03-15 三菱電機株式会社 Optical semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123037A (en) * 1983-12-08 1985-07-01 Toshiba Corp Die-bonding device
JPH0472395B2 (en) * 1983-12-08 1992-11-18 Tokyo Shibaura Electric Co
JP2004288742A (en) * 2003-03-19 2004-10-14 Sumitomo Electric Ind Ltd Optical module
JP4617636B2 (en) * 2003-03-19 2011-01-26 住友電気工業株式会社 Optical module
CN109586165A (en) * 2019-01-25 2019-04-05 维沃移动通信有限公司 A kind of mode of laser group and electronic equipment
JP7036286B1 (en) * 2021-05-11 2022-03-15 三菱電機株式会社 Optical semiconductor device
WO2022239121A1 (en) * 2021-05-11 2022-11-17 三菱電機株式会社 Optical semiconductor device

Also Published As

Publication number Publication date
JPS6152998B2 (en) 1986-11-15

Similar Documents

Publication Publication Date Title
BR7901913A (en) MINIATURIZED FUSIBLE FITTING ASSEMBLY AND MANUFACTURING PROCESS
FR2574950B1 (en) GLASS INTEGRATED OPTICAL COMPONENTS AND THEIR MANUFACTURE
GB2000877A (en) Polymer optical circuit with optical leadfibres and method of fabricating the same
IL57900A (en) High bandwidth optical wave-guides and method of fabrication
BR7804151A (en) MIRROR MANUFACTURING PROCESS AND THE MIRROR OBTAINED
OA07073A (en) A method of manufacturing thin electrodes, in particular gas electrodes, for electrochemical devices and electrochemicals, the electrodes possibly being fitted with current collectors.
BE850657A (en) GLASS MANUFACTURING
JPS5596695A (en) Injection type semiconductor laser
JPS5751149A (en) Acid-resistant hydrolysis-resistant low density optical and ophthalmic glass
DE3068762D1 (en) Coaxial type gas-flow laser device
ES497702A0 (en) IMPROVEMENTS IN AUTOMATIC LIMITING DEVICES OF THE ELECTRONIC BEAM OF A KINESCOPE WITH SEQUENTIAL CONTROL MODES.
DE3583453D1 (en) SEMICONDUCTOR LASER DEVICE WITH AN ISOLATOR.
NO149096C (en) PROCEDURE FOR MANUFACTURING SOFT CONTACT LENSES
AT387468B (en) EYE GLASS WITH HIGH POSITIVE REFRESHING VALUE
JPS55132088A (en) Semiconductor laser device
JPS5316718A (en) Optical glass without lead
DK217882A (en) ELECTRICAL CELL DIAGRAM AND PREPARATION FOR THE MANUFACTURING THEREOF
IT1076267B (en) PROCEDURE FOR THE PROCESSING OF MELT GLASS
IT8323988A0 (en) MANUFACTURING OF OPTICAL DEVICES AND PREFORMS.
JPS57200249A (en) Acid-resistant hydrolysis-resistant low density optical and ophthalmic glass
DK124679A (en) SHAPED METAL OXIDE ELECTRODE ALKALIUM ELEMENT WHICH SUCH AN ELECTRODE IS INCLUDED AND THE METHOD OF MANUFACTURING THE ELECTRODE
GB2053564B (en) Light emitting semiconductor device and method of manufacturing the same
NO160200C (en) PROCEDURE FOR MANUFACTURING ACTIVE SILICON Dioxide.
IT1108377B (en) PROCEDURE AND TANK FOR THE PRODUCTION OF MELTED GLASS
FI812954L (en) PROCEDURE FOR THE EXECUTIVE COMMITTEE