JPS55132068A - Pnp bipolar transistor - Google Patents

Pnp bipolar transistor

Info

Publication number
JPS55132068A
JPS55132068A JP1017980A JP1017980A JPS55132068A JP S55132068 A JPS55132068 A JP S55132068A JP 1017980 A JP1017980 A JP 1017980A JP 1017980 A JP1017980 A JP 1017980A JP S55132068 A JPS55132068 A JP S55132068A
Authority
JP
Japan
Prior art keywords
bipolar transistor
pnp bipolar
pnp
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1017980A
Other languages
English (en)
Inventor
Ii Da Baa Deebitsudo
Daburiyuu Hameika Reimondo
Bii Suteiibunsu Jiyofure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS55132068A publication Critical patent/JPS55132068A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7308—Schottky transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP1017980A 1979-03-30 1980-02-01 Pnp bipolar transistor Pending JPS55132068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2569379A 1979-03-30 1979-03-30

Publications (1)

Publication Number Publication Date
JPS55132068A true JPS55132068A (en) 1980-10-14

Family

ID=21827546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1017980A Pending JPS55132068A (en) 1979-03-30 1980-02-01 Pnp bipolar transistor

Country Status (3)

Country Link
EP (1) EP0017021B1 (ja)
JP (1) JPS55132068A (ja)
DE (1) DE3064082D1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
SE427598B (sv) * 1981-08-25 1983-04-18 Ericsson Telefon Ab L M Halvledardiod avsedd att inga i integrerade kretsar
FR2543739B1 (fr) * 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339878A (en) * 1976-09-24 1978-04-12 Nec Corp Semiconductor device
JPS5511373A (en) * 1978-07-10 1980-01-26 Mitsubishi Electric Corp Transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3280391A (en) * 1964-01-31 1966-10-18 Fairchild Camera Instr Co High frequency transistors
DE2051929A1 (de) * 1970-10-22 1972-05-25 Siemens Ag Halbleiterbauelement
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339878A (en) * 1976-09-24 1978-04-12 Nec Corp Semiconductor device
JPS5511373A (en) * 1978-07-10 1980-01-26 Mitsubishi Electric Corp Transistor

Also Published As

Publication number Publication date
EP0017021B1 (de) 1983-07-13
EP0017021A1 (de) 1980-10-15
DE3064082D1 (en) 1983-08-18

Similar Documents

Publication Publication Date Title
DE3071139D1 (en) Vertical field effect transistor
GB2047960B (en) Bipolar transistor manufacture
IL58773A (en) Emitter unit
ZA774506B (en) Bipolar unit
JPS5680161A (en) Bipolar transistor
JPS5467384A (en) Longitudinal pnp semiconductor
JPS5645079A (en) High cuttoffffrequency electriccfielddeffect transistor
DE3067237D1 (en) Transistor structure
JPS5496980A (en) Complementary bipolar transistor device
GB2073486B (en) Bipolar transistors
JPS5458371A (en) Bipolar transistor
GB2047492B (en) Complementary transistor circuit
GB2037483B (en) Transistors
JPS5715457A (en) Bipolar transistor device
GB1547126A (en) Transistors
GB2051479B (en) Light-controllable transistor
JPS567481A (en) Field effect type transistor
JPS5438775A (en) Lateral bipolar transistor
JPS55163045A (en) Nursing base
JPS5734365A (en) Symmetrical bipolar transistor
GB2075753B (en) H1k bipolar transistor emitter series resistances
JPS5658327A (en) Npn type transistor driving circuit
GB2042259B (en) Lateral pnp transistor
GB1550784A (en) Field-effedt transistors
DE3270193D1 (en) Multi-emitter type npn transistor