JPS55129451U - - Google Patents

Info

Publication number
JPS55129451U
JPS55129451U JP1979029726U JP2972679U JPS55129451U JP S55129451 U JPS55129451 U JP S55129451U JP 1979029726 U JP1979029726 U JP 1979029726U JP 2972679 U JP2972679 U JP 2972679U JP S55129451 U JPS55129451 U JP S55129451U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1979029726U
Other languages
Japanese (ja)
Other versions
JPS5923412Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1979029726U priority Critical patent/JPS5923412Y2/ja
Priority to US06/127,009 priority patent/US4266507A/en
Publication of JPS55129451U publication Critical patent/JPS55129451U/ja
Application granted granted Critical
Publication of JPS5923412Y2 publication Critical patent/JPS5923412Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP1979029726U 1979-03-08 1979-03-08 半導体熱処理装置用キヤツプ装着装置 Expired JPS5923412Y2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1979029726U JPS5923412Y2 (ja) 1979-03-08 1979-03-08 半導体熱処理装置用キヤツプ装着装置
US06/127,009 US4266507A (en) 1979-03-08 1980-03-04 Cap-mounting mechanism for apparatus for thermal treatment of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1979029726U JPS5923412Y2 (ja) 1979-03-08 1979-03-08 半導体熱処理装置用キヤツプ装着装置

Publications (2)

Publication Number Publication Date
JPS55129451U true JPS55129451U (enExample) 1980-09-12
JPS5923412Y2 JPS5923412Y2 (ja) 1984-07-12

Family

ID=12284103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1979029726U Expired JPS5923412Y2 (ja) 1979-03-08 1979-03-08 半導体熱処理装置用キヤツプ装着装置

Country Status (2)

Country Link
US (1) US4266507A (enExample)
JP (1) JPS5923412Y2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
DE60027686T2 (de) * 2000-01-24 2007-01-11 Infineon Technologies Ag Reaktor zur Herstellung einer Halbleiteranordnung
DE102007063363B4 (de) * 2007-05-21 2016-05-12 Centrotherm Photovoltaics Ag Vorrichtung zur Dotierung und Beschichtung von Halbleitermaterial bei niedrigem Druck

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4154192A (en) * 1976-12-10 1979-05-15 Mitsubishi Denki Kabushiki Kaisha Manufacturing apparatus for semiconductor devices
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus

Also Published As

Publication number Publication date
US4266507A (en) 1981-05-12
JPS5923412Y2 (ja) 1984-07-12

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