JPS5512732B2 - - Google Patents
Info
- Publication number
- JPS5512732B2 JPS5512732B2 JP4850776A JP4850776A JPS5512732B2 JP S5512732 B2 JPS5512732 B2 JP S5512732B2 JP 4850776 A JP4850776 A JP 4850776A JP 4850776 A JP4850776 A JP 4850776A JP S5512732 B2 JPS5512732 B2 JP S5512732B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4850776A JPS52132675A (en) | 1976-04-30 | 1976-04-30 | Vapor-phase growth method of thin film |
| US05/787,495 US4179326A (en) | 1976-04-22 | 1977-04-14 | Process for the vapor growth of a thin film |
| SE7704276A SE432162B (sv) | 1976-04-22 | 1977-04-14 | Forfarande for att utifran en anga bringa en tunn film att tillvexa |
| GB16011/77A GB1575578A (en) | 1976-04-22 | 1977-04-18 | Process for the vapour deposition of a thin film |
| IT22668/77A IT1114781B (it) | 1976-04-22 | 1977-04-20 | Processo per l'accresciemento,da fase vapore,di una sottile pellicola |
| FR7712288A FR2348983A1 (fr) | 1976-04-22 | 1977-04-22 | Procede de depot d'une couche mince sous forme vapeur |
| DE2718026A DE2718026C3 (de) | 1976-04-22 | 1977-04-22 | Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4850776A JPS52132675A (en) | 1976-04-30 | 1976-04-30 | Vapor-phase growth method of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52132675A JPS52132675A (en) | 1977-11-07 |
| JPS5512732B2 true JPS5512732B2 (enExample) | 1980-04-03 |
Family
ID=12805278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4850776A Granted JPS52132675A (en) | 1976-04-22 | 1976-04-30 | Vapor-phase growth method of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52132675A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1986006416A1 (en) * | 1985-05-02 | 1986-11-06 | Hewlett-Packard Company | Method and target for sputter depositing thin films |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035536U (ja) * | 1983-08-18 | 1985-03-11 | 九州日本電気株式会社 | 減圧式気相成長装置 |
-
1976
- 1976-04-30 JP JP4850776A patent/JPS52132675A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1986006416A1 (en) * | 1985-05-02 | 1986-11-06 | Hewlett-Packard Company | Method and target for sputter depositing thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52132675A (en) | 1977-11-07 |