JPS5511308A - Displacement converter - Google Patents
Displacement converterInfo
- Publication number
- JPS5511308A JPS5511308A JP8294878A JP8294878A JPS5511308A JP S5511308 A JPS5511308 A JP S5511308A JP 8294878 A JP8294878 A JP 8294878A JP 8294878 A JP8294878 A JP 8294878A JP S5511308 A JPS5511308 A JP S5511308A
- Authority
- JP
- Japan
- Prior art keywords
- transfer unit
- displacement
- distortion transfer
- crystal grain
- grain diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Die Bonding (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To obtain the amount of displacement of a distortion transfer unit with high precision with respect to external force, by making the maximum crystal grain diameter of the cross section perpendicular to the direction of long axis below 200μm when the distortion transfer unit is made of Fe-Ni.
CONSTITUTION: A displacement converter is formed by joining distortion transfer unit 1 with semiconductor detector 2 having a fixed resistance region. In case distortion transfer unit 1 is made of alloy such as Fe-Ni or Ni (30%)-Co (16%), the non-linear error of its displacement depends on the maximum crystal grain diameter of the cross section perpendicular to the direction of long axis. By making the maximum crystal grain diameter below 200μm, it is possible to obtain the amount of displacement of the distortion transfer unit with high precision with respect to external force.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8294878A JPS6041877B2 (en) | 1978-07-10 | 1978-07-10 | displacement transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8294878A JPS6041877B2 (en) | 1978-07-10 | 1978-07-10 | displacement transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5511308A true JPS5511308A (en) | 1980-01-26 |
JPS6041877B2 JPS6041877B2 (en) | 1985-09-19 |
Family
ID=13788432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8294878A Expired JPS6041877B2 (en) | 1978-07-10 | 1978-07-10 | displacement transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6041877B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347872A (en) * | 1986-08-25 | 1994-09-20 | The United States Of America As Represented By The Secretary Of The Navy | Magnetomechanical sensor attachment method |
-
1978
- 1978-07-10 JP JP8294878A patent/JPS6041877B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347872A (en) * | 1986-08-25 | 1994-09-20 | The United States Of America As Represented By The Secretary Of The Navy | Magnetomechanical sensor attachment method |
Also Published As
Publication number | Publication date |
---|---|
JPS6041877B2 (en) | 1985-09-19 |
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