JPS5511305A - Charge-coupling device for analog signal processing - Google Patents

Charge-coupling device for analog signal processing

Info

Publication number
JPS5511305A
JPS5511305A JP8290878A JP8290878A JPS5511305A JP S5511305 A JPS5511305 A JP S5511305A JP 8290878 A JP8290878 A JP 8290878A JP 8290878 A JP8290878 A JP 8290878A JP S5511305 A JPS5511305 A JP S5511305A
Authority
JP
Japan
Prior art keywords
transfer
cell
charge
electrode
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8290878A
Other languages
Japanese (ja)
Other versions
JPS617756B2 (en
Inventor
Takashi Hamano
Masaharu Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8290878A priority Critical patent/JPS5511305A/en
Publication of JPS5511305A publication Critical patent/JPS5511305A/en
Publication of JPS617756B2 publication Critical patent/JPS617756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Abstract

PURPOSE:To reduce distortion due to high-frequency signal components, by reducing the width of the charge transfer passage of a signal charge injection unit greatly compared with the width of a main charge transfer passage and greatly reducing the area of transfer cells. CONSTITUTION:Input diode 11 is coupled with transfer cells A, B, storage cell C, trasfer cell D, storage cell E, transfer cell F. Here, the width of the charge transfer passage of the signal charge injection unit which comprises diode 11, transfer cells A, B, and a storage cell as well as control electrode 12, signal sampling electrode 13, and signal charge storage electrode 14, provided for these is greatly reduced compared with the width of the main charge transfer passage which comprises transfer cell D below transfer electrode 15, storage cell E and transfer cell F below signal storage electrode 16. By this, the area of these transfer cells is greatly reduced, so that distortion due to high-frequency signal components can be reduced.
JP8290878A 1978-07-10 1978-07-10 Charge-coupling device for analog signal processing Granted JPS5511305A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8290878A JPS5511305A (en) 1978-07-10 1978-07-10 Charge-coupling device for analog signal processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8290878A JPS5511305A (en) 1978-07-10 1978-07-10 Charge-coupling device for analog signal processing

Publications (2)

Publication Number Publication Date
JPS5511305A true JPS5511305A (en) 1980-01-26
JPS617756B2 JPS617756B2 (en) 1986-03-08

Family

ID=13787345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8290878A Granted JPS5511305A (en) 1978-07-10 1978-07-10 Charge-coupling device for analog signal processing

Country Status (1)

Country Link
JP (1) JPS5511305A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233399A (en) * 1985-08-05 1987-02-13 Hitachi Ltd Ccd delay line
US4839911A (en) * 1986-04-18 1989-06-13 Thomson-Lsf Charger transfer shift register with voltage sensing device using a floating-potential diode
US5134453A (en) * 1990-02-08 1992-07-28 U.S. Philips Corporation Bulk transport charge-coupled device with linear input characteristic

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233399A (en) * 1985-08-05 1987-02-13 Hitachi Ltd Ccd delay line
JPH0519800B2 (en) * 1985-08-05 1993-03-17 Hitachi Ltd
US4839911A (en) * 1986-04-18 1989-06-13 Thomson-Lsf Charger transfer shift register with voltage sensing device using a floating-potential diode
US5134453A (en) * 1990-02-08 1992-07-28 U.S. Philips Corporation Bulk transport charge-coupled device with linear input characteristic

Also Published As

Publication number Publication date
JPS617756B2 (en) 1986-03-08

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