JPS55107236A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS55107236A
JPS55107236A JP1341479A JP1341479A JPS55107236A JP S55107236 A JPS55107236 A JP S55107236A JP 1341479 A JP1341479 A JP 1341479A JP 1341479 A JP1341479 A JP 1341479A JP S55107236 A JPS55107236 A JP S55107236A
Authority
JP
Japan
Prior art keywords
implanted
heat treatment
layer
laser pulse
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1341479A
Other languages
Japanese (ja)
Inventor
Kazumichi Omura
Takashi Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1341479A priority Critical patent/JPS55107236A/en
Publication of JPS55107236A publication Critical patent/JPS55107236A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve the characteristic of semiconductor elements by subjecting the surfaces of a semiconductor in which impurity ions have been multiple-implanted by luminous radiation to a heat treatment.
CONSTITUTION: A p+-layer 5 for bonding is formed, and for example, B is implanted therein by 30kV, 3×1013/cm2 and P by 20kV, 1×1015/cm2 thereby to form layers 21 and 22. Then, Q-switching ruby laser light C is radiated once in the intensity of about 0.6W0.8J/cm2 to the layers to subject them to a heat treatment and activate the same. According to this method, only ion injected part is heated and activated by the laser pulse radiation for a short period of time, and further in the deep part of the layer the temperature rise is small, and therefore the diffusion of B is suppressed. Thereafter, electrodes 23W25 are formed. By this organization, the element characteristic is improved, and a current gain of about 120 and a cutting frequency of 10GHz are obtained. This method can be applied to the ion injection of more than triple, and the width of the laser pulse of 1mSec or less is desirable for local heating. Also, scanning of a W-lamp may be made.
COPYRIGHT: (C)1980,JPO&Japio
JP1341479A 1979-02-09 1979-02-09 Method of manufacturing semiconductor device Pending JPS55107236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1341479A JPS55107236A (en) 1979-02-09 1979-02-09 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1341479A JPS55107236A (en) 1979-02-09 1979-02-09 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS55107236A true JPS55107236A (en) 1980-08-16

Family

ID=11832469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1341479A Pending JPS55107236A (en) 1979-02-09 1979-02-09 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS55107236A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997050115A1 (en) * 1996-06-24 1997-12-31 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
US8932405B2 (en) * 2004-05-10 2015-01-13 IHP GmbH—Innovations for High Performance Microelectronics/Institut fur Innovative Mikroelektronik Apparatus for low-temperature epitaxy on a plurality semiconductor substrates

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997050115A1 (en) * 1996-06-24 1997-12-31 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
US6251718B1 (en) 1996-06-24 2001-06-26 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
US6312981B1 (en) 1996-06-24 2001-11-06 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
CN1126150C (en) * 1996-06-24 2003-10-29 松下电器产业株式会社 Method for manufacturing semiconductor device
US8932405B2 (en) * 2004-05-10 2015-01-13 IHP GmbH—Innovations for High Performance Microelectronics/Institut fur Innovative Mikroelektronik Apparatus for low-temperature epitaxy on a plurality semiconductor substrates

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