JPS55107236A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS55107236A JPS55107236A JP1341479A JP1341479A JPS55107236A JP S55107236 A JPS55107236 A JP S55107236A JP 1341479 A JP1341479 A JP 1341479A JP 1341479 A JP1341479 A JP 1341479A JP S55107236 A JPS55107236 A JP S55107236A
- Authority
- JP
- Japan
- Prior art keywords
- implanted
- heat treatment
- layer
- laser pulse
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve the characteristic of semiconductor elements by subjecting the surfaces of a semiconductor in which impurity ions have been multiple-implanted by luminous radiation to a heat treatment.
CONSTITUTION: A p+-layer 5 for bonding is formed, and for example, B is implanted therein by 30kV, 3×1013/cm2 and P by 20kV, 1×1015/cm2 thereby to form layers 21 and 22. Then, Q-switching ruby laser light C is radiated once in the intensity of about 0.6W0.8J/cm2 to the layers to subject them to a heat treatment and activate the same. According to this method, only ion injected part is heated and activated by the laser pulse radiation for a short period of time, and further in the deep part of the layer the temperature rise is small, and therefore the diffusion of B is suppressed. Thereafter, electrodes 23W25 are formed. By this organization, the element characteristic is improved, and a current gain of about 120 and a cutting frequency of 10GHz are obtained. This method can be applied to the ion injection of more than triple, and the width of the laser pulse of 1mSec or less is desirable for local heating. Also, scanning of a W-lamp may be made.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1341479A JPS55107236A (en) | 1979-02-09 | 1979-02-09 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1341479A JPS55107236A (en) | 1979-02-09 | 1979-02-09 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55107236A true JPS55107236A (en) | 1980-08-16 |
Family
ID=11832469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1341479A Pending JPS55107236A (en) | 1979-02-09 | 1979-02-09 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107236A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997050115A1 (en) * | 1996-06-24 | 1997-12-31 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
US8932405B2 (en) * | 2004-05-10 | 2015-01-13 | IHP GmbH—Innovations for High Performance Microelectronics/Institut fur Innovative Mikroelektronik | Apparatus for low-temperature epitaxy on a plurality semiconductor substrates |
-
1979
- 1979-02-09 JP JP1341479A patent/JPS55107236A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997050115A1 (en) * | 1996-06-24 | 1997-12-31 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
US6251718B1 (en) | 1996-06-24 | 2001-06-26 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
US6312981B1 (en) | 1996-06-24 | 2001-11-06 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
CN1126150C (en) * | 1996-06-24 | 2003-10-29 | 松下电器产业株式会社 | Method for manufacturing semiconductor device |
US8932405B2 (en) * | 2004-05-10 | 2015-01-13 | IHP GmbH—Innovations for High Performance Microelectronics/Institut fur Innovative Mikroelektronik | Apparatus for low-temperature epitaxy on a plurality semiconductor substrates |
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