JPS55102162A - Ion source - Google Patents
Ion sourceInfo
- Publication number
- JPS55102162A JPS55102162A JP920079A JP920079A JPS55102162A JP S55102162 A JPS55102162 A JP S55102162A JP 920079 A JP920079 A JP 920079A JP 920079 A JP920079 A JP 920079A JP S55102162 A JPS55102162 A JP S55102162A
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- permanent magnet
- loss
- cathode
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce beam loss and control rise in temperature of a permanent magnet of cold cathode type ion source, by incorporating an anode in a discharge chamber formed with a cathode equipped with the magnet.
CONSTITUTION: An anode 21 as No.2 electrode is set in a discharge chamber formed with a ring cathode 20 as No.1 electrode having a permanent magnet 19, and the electric field produced by both electrodes and the magnetic field produced by the permanent magnet 19 cross each other at a right angle in an annular through hole 22. Since ion beams 24 are directly emitted from the hole 22, the beams 24 undergo no loss. A water tank 25 is placed right above the permanent magnet 19 to cool it with water, which is effective for controlling the magnet's temperature rise caused by cathode loss of positive ion. This system can reduce ion beam loss and control the magnet temperature, which is effective for long and continuous use of the ion source.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP920079A JPS55102162A (en) | 1979-01-31 | 1979-01-31 | Ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP920079A JPS55102162A (en) | 1979-01-31 | 1979-01-31 | Ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55102162A true JPS55102162A (en) | 1980-08-05 |
Family
ID=11713841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP920079A Pending JPS55102162A (en) | 1979-01-31 | 1979-01-31 | Ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55102162A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138250U (en) * | 1984-02-24 | 1985-09-12 | 財団法人 電力中央研究所 | Ion irradiation device |
JPS6310432A (en) * | 1986-07-01 | 1988-01-18 | Ulvac Corp | Ion source |
JP2003528423A (en) * | 2000-03-22 | 2003-09-24 | ターレス エレクトロン デバイス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Plasma accelerator |
-
1979
- 1979-01-31 JP JP920079A patent/JPS55102162A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138250U (en) * | 1984-02-24 | 1985-09-12 | 財団法人 電力中央研究所 | Ion irradiation device |
JPS6310432A (en) * | 1986-07-01 | 1988-01-18 | Ulvac Corp | Ion source |
JP2003528423A (en) * | 2000-03-22 | 2003-09-24 | ターレス エレクトロン デバイス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Plasma accelerator |
JP4944336B2 (en) * | 2000-03-22 | 2012-05-30 | ターレス エレクトロン デバイス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Plasma accelerator |
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