JPS5466088A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5466088A
JPS5466088A JP12808177A JP12808177A JPS5466088A JP S5466088 A JPS5466088 A JP S5466088A JP 12808177 A JP12808177 A JP 12808177A JP 12808177 A JP12808177 A JP 12808177A JP S5466088 A JPS5466088 A JP S5466088A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12808177A
Other languages
English (en)
Japanese (ja)
Inventor
Efu Shiroukusu Jiyan
Aaru Purunitsuritsu Berunarudo
Jii Se Kaubin Robeeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5466088A publication Critical patent/JPS5466088A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/812—Charge-trapping diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP12808177A 1976-10-20 1977-10-25 Semiconductor memory cell Pending JPS5466088A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7631541A FR2368784A1 (fr) 1976-10-20 1976-10-20 Cellule de memoire a grille flottante a double injection

Publications (1)

Publication Number Publication Date
JPS5466088A true JPS5466088A (en) 1979-05-28

Family

ID=9178985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12808177A Pending JPS5466088A (en) 1976-10-20 1977-10-25 Semiconductor memory cell

Country Status (2)

Country Link
JP (1) JPS5466088A (enExample)
FR (1) FR2368784A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141390A1 (de) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120679A (en) * 1975-04-16 1976-10-22 Agency Of Ind Science & Technol Semiconductive non-volatile memory element
JPS5283074A (en) * 1975-12-29 1977-07-11 Texas Instruments Inc Semiconductor memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120679A (en) * 1975-04-16 1976-10-22 Agency Of Ind Science & Technol Semiconductive non-volatile memory element
JPS5283074A (en) * 1975-12-29 1977-07-11 Texas Instruments Inc Semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
FR2368784B1 (enExample) 1980-09-26
FR2368784A1 (fr) 1978-05-19

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