JPS5455152A - Microwave oscillator - Google Patents

Microwave oscillator

Info

Publication number
JPS5455152A
JPS5455152A JP12218177A JP12218177A JPS5455152A JP S5455152 A JPS5455152 A JP S5455152A JP 12218177 A JP12218177 A JP 12218177A JP 12218177 A JP12218177 A JP 12218177A JP S5455152 A JPS5455152 A JP S5455152A
Authority
JP
Japan
Prior art keywords
metal post
radio
wave absorber
waveguide
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12218177A
Other languages
Japanese (ja)
Inventor
Hiroshi Saka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12218177A priority Critical patent/JPS5455152A/en
Publication of JPS5455152A publication Critical patent/JPS5455152A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/148—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a dielectric resonator

Abstract

PURPOSE:To improve oscillation by providing uniformly a microwave absorber in the height direction of a waveguide in a breaking region. CONSTITUTION:Solid oscillator 2 is fitted to metal post 3 inside waveguide 1 in a breaking region, and dielectric resonator 4 is so arranged that it will couple with metal post 3 electromagnetically; and then, radio-wave absorber 7 is provided to the entire opening surface of waveguide 5 in a breaking region in parallel to and closely to metal post 3, and metal plate 6 is provided in contact with radio-wave absorber 7. Providing radio-wave absorber 7 in parallel and closely to metal post 3 becomes equivalent to giving a loss to metal post 3, and this radio-wave absorber 7 suppresses the mode jump in a region where a bias voltage is low.
JP12218177A 1977-10-11 1977-10-11 Microwave oscillator Pending JPS5455152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12218177A JPS5455152A (en) 1977-10-11 1977-10-11 Microwave oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12218177A JPS5455152A (en) 1977-10-11 1977-10-11 Microwave oscillator

Publications (1)

Publication Number Publication Date
JPS5455152A true JPS5455152A (en) 1979-05-02

Family

ID=14829572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12218177A Pending JPS5455152A (en) 1977-10-11 1977-10-11 Microwave oscillator

Country Status (1)

Country Link
JP (1) JPS5455152A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50115961A (en) * 1974-02-25 1975-09-10
JPS5229147A (en) * 1975-09-01 1977-03-04 Mitsubishi Electric Corp Semiconductor directoscillator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50115961A (en) * 1974-02-25 1975-09-10
JPS5229147A (en) * 1975-09-01 1977-03-04 Mitsubishi Electric Corp Semiconductor directoscillator

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