JPS5431671B2 - - Google Patents
Info
- Publication number
- JPS5431671B2 JPS5431671B2 JP3030173A JP3030173A JPS5431671B2 JP S5431671 B2 JPS5431671 B2 JP S5431671B2 JP 3030173 A JP3030173 A JP 3030173A JP 3030173 A JP3030173 A JP 3030173A JP S5431671 B2 JPS5431671 B2 JP S5431671B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/901—MOSFET substrate bias
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3030173A JPS5431671B2 (en, 2012) | 1973-03-14 | 1973-03-14 | |
| US05/448,258 US3932884A (en) | 1973-03-14 | 1974-03-05 | MIS type integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3030173A JPS5431671B2 (en, 2012) | 1973-03-14 | 1973-03-14 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9966180A Division JPS5673471A (en) | 1980-07-21 | 1980-07-21 | Mis type integrated circuit |
| JP9966280A Division JPS5678151A (en) | 1980-07-21 | 1980-07-21 | Mis type integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS504981A JPS504981A (en, 2012) | 1975-01-20 |
| JPS5431671B2 true JPS5431671B2 (en, 2012) | 1979-10-08 |
Family
ID=12299911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3030173A Expired JPS5431671B2 (en, 2012) | 1973-03-14 | 1973-03-14 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3932884A (en, 2012) |
| JP (1) | JPS5431671B2 (en, 2012) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1044690B (it) * | 1974-11-11 | 1980-04-21 | Siemens Ag | Dispositivo con due transistori a effetto di campo complementari |
| US4303958A (en) * | 1979-06-18 | 1981-12-01 | Motorola Inc. | Reverse battery protection |
| JPS56125854A (en) * | 1980-03-10 | 1981-10-02 | Nec Corp | Integrated circuit |
| JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
| JP3394133B2 (ja) * | 1996-06-12 | 2003-04-07 | 沖電気工業株式会社 | 昇圧回路 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3434068A (en) * | 1967-06-19 | 1969-03-18 | Texas Instruments Inc | Integrated circuit amplifier utilizing field-effect transistors having parallel reverse connected diodes as bias circuits therefor |
| US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
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1973
- 1973-03-14 JP JP3030173A patent/JPS5431671B2/ja not_active Expired
-
1974
- 1974-03-05 US US05/448,258 patent/US3932884A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS504981A (en, 2012) | 1975-01-20 |
| US3932884A (en) | 1976-01-13 |