JPS542633A - Writing method to nonvoltile memory - Google Patents

Writing method to nonvoltile memory

Info

Publication number
JPS542633A
JPS542633A JP6823977A JP6823977A JPS542633A JP S542633 A JPS542633 A JP S542633A JP 6823977 A JP6823977 A JP 6823977A JP 6823977 A JP6823977 A JP 6823977A JP S542633 A JPS542633 A JP S542633A
Authority
JP
Japan
Prior art keywords
nonvoltile
memory
writing method
write
unneeded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6823977A
Other languages
Japanese (ja)
Inventor
Kanichi Harima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6823977A priority Critical patent/JPS542633A/en
Publication of JPS542633A publication Critical patent/JPS542633A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM

Abstract

PURPOSE:To eliminate an unneeded write sequence by removing the generation of heat for continuously applying program pulses to the same address making combinational use between two kinds of write direction.
JP6823977A 1977-06-08 1977-06-08 Writing method to nonvoltile memory Pending JPS542633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6823977A JPS542633A (en) 1977-06-08 1977-06-08 Writing method to nonvoltile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6823977A JPS542633A (en) 1977-06-08 1977-06-08 Writing method to nonvoltile memory

Publications (1)

Publication Number Publication Date
JPS542633A true JPS542633A (en) 1979-01-10

Family

ID=13368023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6823977A Pending JPS542633A (en) 1977-06-08 1977-06-08 Writing method to nonvoltile memory

Country Status (1)

Country Link
JP (1) JPS542633A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60204602A (en) * 1984-03-30 1985-10-16 Toyo Soda Mfg Co Ltd Production of iodine powder
JPS6154585A (en) * 1984-08-24 1986-03-18 Toppan Printing Co Ltd Data writing system of ic card
JPS6154584A (en) * 1984-08-24 1986-03-18 Toppan Printing Co Ltd Data writing system of ic card
JPH02308500A (en) * 1989-05-22 1990-12-21 Nec Corp Electrically programmable and erasable nonvolatile semiconductor memory
JPH05182476A (en) * 1992-06-04 1993-07-23 Toshiba Corp Nonvolatile semiconductor memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60204602A (en) * 1984-03-30 1985-10-16 Toyo Soda Mfg Co Ltd Production of iodine powder
JPS6154585A (en) * 1984-08-24 1986-03-18 Toppan Printing Co Ltd Data writing system of ic card
JPS6154584A (en) * 1984-08-24 1986-03-18 Toppan Printing Co Ltd Data writing system of ic card
JPH02308500A (en) * 1989-05-22 1990-12-21 Nec Corp Electrically programmable and erasable nonvolatile semiconductor memory
JPH05182476A (en) * 1992-06-04 1993-07-23 Toshiba Corp Nonvolatile semiconductor memory
JP2502008B2 (en) * 1992-06-04 1996-05-29 株式会社東芝 Non-volatile semiconductor memory

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