JPS542280A - Preparation of semiconductor crystal by floating zone method - Google Patents

Preparation of semiconductor crystal by floating zone method

Info

Publication number
JPS542280A
JPS542280A JP6677377A JP6677377A JPS542280A JP S542280 A JPS542280 A JP S542280A JP 6677377 A JP6677377 A JP 6677377A JP 6677377 A JP6677377 A JP 6677377A JP S542280 A JPS542280 A JP S542280A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor crystal
floating zone
zone method
heating coils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6677377A
Other languages
English (en)
Other versions
JPS5611674B2 (ja
Inventor
Hisashi Egarashi
Susumu Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOYO SHIRIKON KK
Mitsubishi Materials Silicon Corp
Mitsubishi Metal Corp
Original Assignee
TOYO SHIRIKON KK
Toyo Silicon Co Ltd
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOYO SHIRIKON KK, Toyo Silicon Co Ltd, Mitsubishi Metal Corp filed Critical TOYO SHIRIKON KK
Priority to JP6677377A priority Critical patent/JPS542280A/ja
Publication of JPS542280A publication Critical patent/JPS542280A/ja
Publication of JPS5611674B2 publication Critical patent/JPS5611674B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)
JP6677377A 1977-06-08 1977-06-08 Preparation of semiconductor crystal by floating zone method Granted JPS542280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6677377A JPS542280A (en) 1977-06-08 1977-06-08 Preparation of semiconductor crystal by floating zone method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6677377A JPS542280A (en) 1977-06-08 1977-06-08 Preparation of semiconductor crystal by floating zone method

Publications (2)

Publication Number Publication Date
JPS542280A true JPS542280A (en) 1979-01-09
JPS5611674B2 JPS5611674B2 (ja) 1981-03-16

Family

ID=13325509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6677377A Granted JPS542280A (en) 1977-06-08 1977-06-08 Preparation of semiconductor crystal by floating zone method

Country Status (1)

Country Link
JP (1) JPS542280A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291887A (ja) * 1987-05-25 1988-11-29 Shin Etsu Handotai Co Ltd 半導体単結晶製造装置
JPH0524966A (ja) * 1991-07-16 1993-02-02 Shin Etsu Handotai Co Ltd Ｆｚ法による半導体シリコン単結晶の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291887A (ja) * 1987-05-25 1988-11-29 Shin Etsu Handotai Co Ltd 半導体単結晶製造装置
JPH0534316B2 (ja) * 1987-05-25 1993-05-21 Shinetsu Handotai Kk
JPH0524966A (ja) * 1991-07-16 1993-02-02 Shin Etsu Handotai Co Ltd Ｆｚ法による半導体シリコン単結晶の製造方法

Also Published As

Publication number Publication date
JPS5611674B2 (ja) 1981-03-16

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