JPS5421973A - Gas phase reaction apparatus - Google Patents

Gas phase reaction apparatus

Info

Publication number
JPS5421973A
JPS5421973A JP8609477A JP8609477A JPS5421973A JP S5421973 A JPS5421973 A JP S5421973A JP 8609477 A JP8609477 A JP 8609477A JP 8609477 A JP8609477 A JP 8609477A JP S5421973 A JPS5421973 A JP S5421973A
Authority
JP
Japan
Prior art keywords
gas phase
phase reaction
reaction apparatus
gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8609477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5630058B2 (enrdf_load_stackoverflow
Inventor
Masataka Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHO LSI GIJUTSU KENKYU KUMIAI
Priority to JP8609477A priority Critical patent/JPS5421973A/ja
Publication of JPS5421973A publication Critical patent/JPS5421973A/ja
Publication of JPS5630058B2 publication Critical patent/JPS5630058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8609477A 1977-07-20 1977-07-20 Gas phase reaction apparatus Granted JPS5421973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8609477A JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8609477A JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Publications (2)

Publication Number Publication Date
JPS5421973A true JPS5421973A (en) 1979-02-19
JPS5630058B2 JPS5630058B2 (enrdf_load_stackoverflow) 1981-07-13

Family

ID=13877111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8609477A Granted JPS5421973A (en) 1977-07-20 1977-07-20 Gas phase reaction apparatus

Country Status (1)

Country Link
JP (1) JPS5421973A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787057U (enrdf_load_stackoverflow) * 1980-11-12 1982-05-28
JPS57128919A (en) * 1980-12-20 1982-08-10 Kenburitsuji Insutorumentsu Lt Depositiong device
JPS58163431A (ja) * 1982-03-24 1983-09-28 Fujitsu Ltd 化学気相成長方法及びその装置
JPS5931239U (ja) * 1982-08-23 1984-02-27 日本電気ホームエレクトロニクス株式会社 半導体製造装置
JPS5969494A (ja) * 1982-10-14 1984-04-19 Ulvac Corp 低圧気体蒸気反応処理装置
JPS6034010A (ja) * 1983-08-05 1985-02-21 Agency Of Ind Science & Technol 反応管
JPS61156725A (ja) * 1984-12-27 1986-07-16 Fujitsu Ltd 気相成長装置
WO1999043875A1 (fr) * 1998-02-27 1999-09-02 Super Silicon Crystal Research Institute Corp. Appareil de croissance epitaxiale
JP2007039275A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2013074213A (ja) * 2011-09-28 2013-04-22 Nuflare Technology Inc 成膜装置および成膜方法
US9314824B2 (en) 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139540U (enrdf_load_stackoverflow) * 1989-04-25 1990-11-21

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787057U (enrdf_load_stackoverflow) * 1980-11-12 1982-05-28
JPS57128919A (en) * 1980-12-20 1982-08-10 Kenburitsuji Insutorumentsu Lt Depositiong device
JPS58163431A (ja) * 1982-03-24 1983-09-28 Fujitsu Ltd 化学気相成長方法及びその装置
JPS5931239U (ja) * 1982-08-23 1984-02-27 日本電気ホームエレクトロニクス株式会社 半導体製造装置
JPS5969494A (ja) * 1982-10-14 1984-04-19 Ulvac Corp 低圧気体蒸気反応処理装置
JPS6034010A (ja) * 1983-08-05 1985-02-21 Agency Of Ind Science & Technol 反応管
JPS61156725A (ja) * 1984-12-27 1986-07-16 Fujitsu Ltd 気相成長装置
WO1999043875A1 (fr) * 1998-02-27 1999-09-02 Super Silicon Crystal Research Institute Corp. Appareil de croissance epitaxiale
JP2007039275A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd 気相成長装置、ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板
JP2013074213A (ja) * 2011-09-28 2013-04-22 Nuflare Technology Inc 成膜装置および成膜方法
US9314824B2 (en) 2013-11-08 2016-04-19 Mks Instruments, Inc. Powder and deposition control in throttle valves

Also Published As

Publication number Publication date
JPS5630058B2 (enrdf_load_stackoverflow) 1981-07-13

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