JPS5421698B2 - - Google Patents
Info
- Publication number
- JPS5421698B2 JPS5421698B2 JP10407675A JP10407675A JPS5421698B2 JP S5421698 B2 JPS5421698 B2 JP S5421698B2 JP 10407675 A JP10407675 A JP 10407675A JP 10407675 A JP10407675 A JP 10407675A JP S5421698 B2 JPS5421698 B2 JP S5421698B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Stand-By Power Supply Arrangements (AREA)
- Power Sources (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50104076A JPS5228824A (en) | 1975-08-29 | 1975-08-29 | Multiple storage unit |
| US05/717,668 US4122541A (en) | 1975-08-29 | 1976-08-25 | Non-volatile memory device |
| GB3538176A GB1537114A (en) | 1975-08-29 | 1976-08-25 | Memory apparatus |
| DE19762638703 DE2638703C3 (de) | 1975-08-29 | 1976-08-27 | Speichervorrichtung mit direktem Zugriff |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50104076A JPS5228824A (en) | 1975-08-29 | 1975-08-29 | Multiple storage unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5228824A JPS5228824A (en) | 1977-03-04 |
| JPS5421698B2 true JPS5421698B2 (en, 2012) | 1979-08-01 |
Family
ID=14371048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50104076A Granted JPS5228824A (en) | 1975-08-29 | 1975-08-29 | Multiple storage unit |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4122541A (en, 2012) |
| JP (1) | JPS5228824A (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545336A (en) * | 1977-06-15 | 1979-01-16 | Toshiba Corp | Memory of charge pump type |
| US4184208A (en) * | 1978-07-19 | 1980-01-15 | Texas Instruments Incorporated | Pseudo-static semiconductor memory cell |
| US4207615A (en) * | 1978-11-17 | 1980-06-10 | Intel Corporation | Non-volatile ram cell |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| US4399522A (en) * | 1980-09-30 | 1983-08-16 | International Business Machines Corporation | Non-volatile static RAM cell with enhanced conduction insulators |
| JPS57113482A (en) * | 1980-12-29 | 1982-07-14 | Seiko Epson Corp | Semiconductor storage device |
| US4460978A (en) * | 1981-11-19 | 1984-07-17 | Mostek Corporation | Nonvolatile static random access memory cell |
| US5218569A (en) | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
| US6002614A (en) * | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| US6353554B1 (en) | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| DE10361713B4 (de) * | 2003-12-30 | 2008-02-07 | Qimonda Ag | Verwendung von Charge-Transfer-Komplexen aus einem Elektronendonor und einem Elektronenakzeptor als Basis für resistive Speicher und Speicherzelle enthaltend diese Komplexe |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579204A (en) * | 1969-03-24 | 1971-05-18 | Sperry Rand Corp | Variable conduction threshold transistor memory circuit insensitive to threshold deviations |
| US3660827A (en) * | 1969-09-10 | 1972-05-02 | Litton Systems Inc | Bistable electrical circuit with non-volatile storage capability |
| US3651492A (en) * | 1970-11-02 | 1972-03-21 | Ncr Co | Nonvolatile memory cell |
| US3676717A (en) * | 1970-11-02 | 1972-07-11 | Ncr Co | Nonvolatile flip-flop memory cell |
| US3706976A (en) * | 1970-11-05 | 1972-12-19 | Sperry Rand Corp | Three-dimensional selection technique for variable threshold insulated gate field effect transistor memories |
| US3699535A (en) * | 1971-02-01 | 1972-10-17 | Raytheon Co | Memory look-ahead connection arrangement for writing into an unoccupied address and prevention of reading out from an empty address |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3895360A (en) * | 1974-01-29 | 1975-07-15 | Westinghouse Electric Corp | Block oriented random access memory |
| JPS51129144A (en) * | 1975-05-02 | 1976-11-10 | Toshiba Corp | Memory divice of non volatile information |
-
1975
- 1975-08-29 JP JP50104076A patent/JPS5228824A/ja active Granted
-
1976
- 1976-08-25 US US05/717,668 patent/US4122541A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4122541A (en) | 1978-10-24 |
| JPS5228824A (en) | 1977-03-04 |