JPS542055B1 - - Google Patents
Info
- Publication number
- JPS542055B1 JPS542055B1 JP2936073A JP2936073A JPS542055B1 JP S542055 B1 JPS542055 B1 JP S542055B1 JP 2936073 A JP2936073 A JP 2936073A JP 2936073 A JP2936073 A JP 2936073A JP S542055 B1 JPS542055 B1 JP S542055B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US198923A US3191061A (en) | 1962-05-31 | 1962-05-31 | Insulated gate field effect devices and electrical circuits employing such devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS542055B1 true JPS542055B1 (en:Method) | 1979-02-01 |
Family
ID=22735462
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5981266A Pending JPS4823703B1 (en:Method) | 1962-05-31 | 1963-05-31 | |
JP38028886A Pending JPS4830188B1 (en:Method) | 1962-05-31 | 1963-05-31 | |
JP2936073A Pending JPS542055B1 (en:Method) | 1962-05-31 | 1973-03-13 | |
JP7919678A Pending JPS5623021A (en) | 1962-05-31 | 1978-06-28 | Flippflop unit |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5981266A Pending JPS4823703B1 (en:Method) | 1962-05-31 | 1963-05-31 | |
JP38028886A Pending JPS4830188B1 (en:Method) | 1962-05-31 | 1963-05-31 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7919678A Pending JPS5623021A (en) | 1962-05-31 | 1978-06-28 | Flippflop unit |
Country Status (8)
Country | Link |
---|---|
US (1) | US3191061A (en:Method) |
JP (4) | JPS4823703B1 (en:Method) |
BE (1) | BE632998A (en:Method) |
DE (1) | DE1234856B (en:Method) |
FR (1) | FR1366856A (en:Method) |
GB (1) | GB1037519A (en:Method) |
NL (2) | NL141707B (en:Method) |
SE (2) | SE325310B (en:Method) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681799U (en:Method) * | 1979-11-27 | 1981-07-02 | ||
JPH01220021A (ja) * | 1988-02-29 | 1989-09-01 | Takara Co Ltd | 入出力装置 |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL290035A (en:Method) * | 1962-03-12 | |||
NL299194A (en:Method) * | 1962-10-15 | |||
US3320464A (en) * | 1963-05-06 | 1967-05-16 | Hughes Aircraft Co | Inverted solid state triode and tetrode devices |
US3327133A (en) * | 1963-05-28 | 1967-06-20 | Rca Corp | Electronic switching |
US3311756A (en) * | 1963-06-24 | 1967-03-28 | Hitachi Seisakusho Tokyoto Kk | Electronic circuit having a fieldeffect transistor therein |
US3293512A (en) * | 1963-09-20 | 1966-12-20 | Burroughs Corp | Thin film, solid state amplifier with source and drain on opposite sides of the semiconductor layer |
US3265981A (en) * | 1963-12-02 | 1966-08-09 | Hughes Aircraft Co | Thin-film electrical networks with nonresistive feedback arrangement |
US3292008A (en) * | 1963-12-03 | 1966-12-13 | Rca Corp | Switching circuit having low standby power dissipation |
US3289054A (en) * | 1963-12-26 | 1966-11-29 | Ibm | Thin film transistor and method of fabrication |
US3290569A (en) * | 1964-02-14 | 1966-12-06 | Rca Corp | Tellurium thin film field effect solid state electrical devices |
US3296547A (en) * | 1964-03-31 | 1967-01-03 | Ii Louis Sickles | Insulated gate field effect transistor gate return |
US3316494A (en) * | 1964-05-04 | 1967-04-25 | Gen Telephone & Elect | Semiconductor microwave power detector |
US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
US3309534A (en) * | 1964-07-22 | 1967-03-14 | Edwin K C Yu | Bistable flip-flop employing insulated gate field effect transistors |
US3355721A (en) * | 1964-08-25 | 1967-11-28 | Rca Corp | Information storage |
US3313988A (en) * | 1964-08-31 | 1967-04-11 | Gen Dynamics Corp | Field effect semiconductor device and method of forming same |
US3369159A (en) * | 1964-12-21 | 1968-02-13 | Texas Instruments Inc | Printed transistors and methods of making same |
US3363115A (en) * | 1965-03-29 | 1968-01-09 | Gen Micro Electronics Inc | Integral counting circuit with storage capacitors in the conductive path of steering gate circuits |
US3331998A (en) * | 1965-04-12 | 1967-07-18 | Hughes Aircraft Co | Thin film heterojunction device |
US3445732A (en) * | 1965-06-28 | 1969-05-20 | Ledex Inc | Field effect device having an electrolytically insulated gate |
US3351786A (en) * | 1965-08-06 | 1967-11-07 | Univ California | Piezoelectric-semiconductor, electromechanical transducer |
US3414740A (en) * | 1965-09-08 | 1968-12-03 | Ibm | Integrated insulated gate field effect logic circuitry |
US3539839A (en) * | 1966-01-31 | 1970-11-10 | Nippon Electric Co | Semiconductor memory device |
US3764864A (en) * | 1966-03-29 | 1973-10-09 | Matsushita Electronics Corp | Insulated-gate field-effect transistor with punch-through effect element |
US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
US3336486A (en) * | 1966-09-06 | 1967-08-15 | Energy Conversion Devices Inc | Control system having multiple electrode current controlling device |
US3473094A (en) * | 1967-08-02 | 1969-10-14 | Rca Corp | Integrated arrangement for integrated circuit structures |
US3533087A (en) * | 1967-09-15 | 1970-10-06 | Rca Corp | Memory employing transistor storage cells |
US3564135A (en) * | 1967-10-12 | 1971-02-16 | Rca Corp | Integrated display panel utilizing field-effect transistors |
GB1240110A (en) * | 1967-12-14 | 1971-07-21 | Plessey Co Ltd | Improvements in or relating to switching circuits |
FR1563879A (en:Method) * | 1968-02-09 | 1969-04-18 | ||
DE1924208C3 (de) * | 1969-05-12 | 1982-08-12 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte Halbleiterschaltung |
US3646371A (en) * | 1969-07-25 | 1972-02-29 | Us Army | Integrated timer with nonvolatile memory |
US3654496A (en) * | 1970-04-30 | 1972-04-04 | Us Army | Electric timer with nonvolatile memory |
US3654499A (en) * | 1970-06-24 | 1972-04-04 | Bell Telephone Labor Inc | Charge coupled memory with storage sites |
US3706977A (en) * | 1971-11-11 | 1972-12-19 | Ibm | Functional memory storage cell |
US3728556A (en) * | 1971-11-24 | 1973-04-17 | United Aircraft Corp | Regenerative fet converter circuitry |
US3974515A (en) * | 1974-09-12 | 1976-08-10 | Rca Corporation | IGFET on an insulating substrate |
JPS5252582A (en) * | 1975-10-25 | 1977-04-27 | Toshiba Corp | Device and production for semiconductor |
US4204217A (en) * | 1976-10-18 | 1980-05-20 | Rca Corporation | Transistor using liquid crystal |
US4169746A (en) * | 1977-04-28 | 1979-10-02 | Rca Corp. | Method for making silicon on sapphire transistor utilizing predeposition of leads |
US4422090A (en) * | 1979-07-25 | 1983-12-20 | Northern Telecom Limited | Thin film transistors |
JPS6055914B2 (ja) * | 1979-10-19 | 1985-12-07 | 株式会社東芝 | 半導体記憶装置 |
JPS5713777A (en) * | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
GB2118774B (en) * | 1982-02-25 | 1985-11-27 | Sharp Kk | Insulated gate thin film transistor |
JPS58197775A (ja) * | 1982-05-13 | 1983-11-17 | Canon Inc | 薄膜トランジスタ |
US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
US4609889A (en) * | 1984-07-13 | 1986-09-02 | Rca Corporation | Microwave frequency power combiner |
GB2173037A (en) * | 1985-03-29 | 1986-10-01 | Philips Electronic Associated | Semiconductor devices employing conductivity modulation |
US4862243A (en) * | 1987-06-01 | 1989-08-29 | Texas Instruments Incorporated | Scalable fuse link element |
US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3190061A (en) * | 1963-11-04 | 1965-06-22 | John E Gilbertson | Lawnmower device |
JPS4830188A (en:Method) * | 1971-08-23 | 1973-04-20 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3040266A (en) * | 1958-06-16 | 1962-06-19 | Union Carbide Corp | Surface field effect transistor amplifier |
FR1256116A (fr) * | 1959-02-06 | 1961-03-17 | Texas Instruments Inc | Nouveaux circuits électroniques miniatures et procédés pour leur fabrication |
US3115581A (en) * | 1959-05-06 | 1963-12-24 | Texas Instruments Inc | Miniature semiconductor integrated circuit |
NL264274A (en:Method) * | 1960-05-02 | 1900-01-01 | ||
US3134912A (en) * | 1960-05-02 | 1964-05-26 | Texas Instruments Inc | Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure |
-
0
- NL NL293447D patent/NL293447A/xx unknown
- BE BE632998D patent/BE632998A/xx unknown
-
1962
- 1962-05-31 US US198923A patent/US3191061A/en not_active Expired - Lifetime
-
1963
- 1963-05-01 GB GB17274/63A patent/GB1037519A/en not_active Expired
- 1963-05-29 FR FR936409A patent/FR1366856A/fr not_active Expired
- 1963-05-30 SE SE06023/63A patent/SE325310B/xx unknown
- 1963-05-30 NL NL63293447A patent/NL141707B/xx not_active IP Right Cessation
- 1963-05-30 DE DER35300A patent/DE1234856B/de active Pending
- 1963-05-30 SE SE12780/68A patent/SE356185B/xx unknown
- 1963-05-31 JP JP5981266A patent/JPS4823703B1/ja active Pending
- 1963-05-31 JP JP38028886A patent/JPS4830188B1/ja active Pending
-
1973
- 1973-03-13 JP JP2936073A patent/JPS542055B1/ja active Pending
-
1978
- 1978-06-28 JP JP7919678A patent/JPS5623021A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3190061A (en) * | 1963-11-04 | 1965-06-22 | John E Gilbertson | Lawnmower device |
JPS4830188A (en:Method) * | 1971-08-23 | 1973-04-20 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681799U (en:Method) * | 1979-11-27 | 1981-07-02 | ||
JPH01220021A (ja) * | 1988-02-29 | 1989-09-01 | Takara Co Ltd | 入出力装置 |
Also Published As
Publication number | Publication date |
---|---|
NL141707B (nl) | 1974-03-15 |
DE1234856B (de) | 1967-02-23 |
JPS4830188B1 (en:Method) | 1973-09-18 |
BE632998A (en:Method) | |
JPS5623021A (en) | 1981-03-04 |
NL293447A (en:Method) | |
SE356185B (en:Method) | 1973-05-14 |
SE325310B (en:Method) | 1970-06-29 |
JPS4823703B1 (en:Method) | 1973-07-16 |
GB1037519A (en) | 1966-07-27 |
FR1366856A (fr) | 1964-07-17 |
US3191061A (en) | 1965-06-22 |