JPS54151375A - Inspection method for semiconductor device - Google Patents
Inspection method for semiconductor deviceInfo
- Publication number
- JPS54151375A JPS54151375A JP6027578A JP6027578A JPS54151375A JP S54151375 A JPS54151375 A JP S54151375A JP 6027578 A JP6027578 A JP 6027578A JP 6027578 A JP6027578 A JP 6027578A JP S54151375 A JPS54151375 A JP S54151375A
- Authority
- JP
- Japan
- Prior art keywords
- distribution
- symmetrical
- temperature rise
- heat sink
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
PURPOSE: To simplify the inspection of device causing time aging variation, by discriminating the device as non-defective device when the distribution is symmetrical through the observation of temperature rise at every part, in inspecting the semiconductor device pressure-welding the both ends of the semiconductor chip with power applicatiin.
CONSTITUTION: The forward current corresponding to the rated permissible loss is flowed to the double heat sink diode in which the semiconductor chip 1 is pressure- welded to the heat sinks 3 and 4, and the surface temperature rise of the glass seal part 5 is measured by using an infrared ray thermometer. The temperature rise distribution thus obtained is observed, and it is discriminated that the chip 1 and the heat sink 3 and the bump 2 and the heat sink 4 are in perfect connection when this distribution is symmetrical. If the contact is incomplete, the distribution is not symmetrical. Accordingly, the judgement is simplified to enable shipment of non- defective devices.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6027578A JPS54151375A (en) | 1978-05-19 | 1978-05-19 | Inspection method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6027578A JPS54151375A (en) | 1978-05-19 | 1978-05-19 | Inspection method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54151375A true JPS54151375A (en) | 1979-11-28 |
Family
ID=13137417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6027578A Pending JPS54151375A (en) | 1978-05-19 | 1978-05-19 | Inspection method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54151375A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103076551A (en) * | 2013-01-01 | 2013-05-01 | 北京工业大学 | Thermal resistance composition test device and method for LED (light emitting diode) lamp |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5337385A (en) * | 1976-09-20 | 1978-04-06 | Hitachi Ltd | Inspecting method of arrayed devices |
-
1978
- 1978-05-19 JP JP6027578A patent/JPS54151375A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5337385A (en) * | 1976-09-20 | 1978-04-06 | Hitachi Ltd | Inspecting method of arrayed devices |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103076551A (en) * | 2013-01-01 | 2013-05-01 | 北京工业大学 | Thermal resistance composition test device and method for LED (light emitting diode) lamp |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Narendran et al. | Life of LED-based white light sources | |
Cova et al. | On the effect of power cycling stress on IGBT modules | |
JPS54151375A (en) | Inspection method for semiconductor device | |
Ju et al. | Thermal mapping of interconnects subjected to brief electrical stresses | |
Hamidi et al. | Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions | |
JPS5739364A (en) | Thermal resistance measuring method of semiconductor device | |
JPS5326577A (en) | Semiconductor device pre-heating unit | |
Keppens et al. | Light-emitting diode junction temperature and power determination from forward current | |
JP2671624B2 (en) | Heat dissipation medium inspection method | |
Yazawa et al. | Intrinsic transient thermal response of GaN HEMT | |
JPS52144960A (en) | Inspecting method of semiconductor wafers | |
SU1476296A1 (en) | Heating device | |
JPS54102976A (en) | Bonding test method for semiconductor element | |
SU993174A1 (en) | Semiconductor device quality control measuring method | |
JPS5318972A (en) | Monitoring method of wafer positioning state by probes | |
Riette et al. | Characterization of photovoltaic cells using the photothermal deflection spectroscopy | |
JPS5337385A (en) | Inspecting method of arrayed devices | |
JPS58155375A (en) | Voltage applied high temperature continuous testing of semiconductor device | |
JPS5472983A (en) | Measuring method for semiconductor element | |
JPS5487073A (en) | Ohmic contact testing method for semiconductor device | |
Boucher et al. | Non-destructive photofrequency method for characterization and degradation studies of solar cells | |
JPS5515085A (en) | Inspection method of semiconductor element | |
JPS55102246A (en) | Method for indicating defective semiconductor chip | |
US3369941A (en) | Thermoelectric device | |
JPH04152651A (en) | Wafer burn-in device |