JPS5414178A - Forming method of charge guide layer for charge transfer device - Google Patents

Forming method of charge guide layer for charge transfer device

Info

Publication number
JPS5414178A
JPS5414178A JP8026477A JP8026477A JPS5414178A JP S5414178 A JPS5414178 A JP S5414178A JP 8026477 A JP8026477 A JP 8026477A JP 8026477 A JP8026477 A JP 8026477A JP S5414178 A JPS5414178 A JP S5414178A
Authority
JP
Japan
Prior art keywords
charge
guide layer
transfer device
forming method
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8026477A
Other languages
Japanese (ja)
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8026477A priority Critical patent/JPS5414178A/en
Publication of JPS5414178A publication Critical patent/JPS5414178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the deterioration in the transfer efficiency based on the alignment error and to form the transfer path of meandering shape, by forming the charge guide layer with self-alignment method.
JP8026477A 1977-07-04 1977-07-04 Forming method of charge guide layer for charge transfer device Pending JPS5414178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8026477A JPS5414178A (en) 1977-07-04 1977-07-04 Forming method of charge guide layer for charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8026477A JPS5414178A (en) 1977-07-04 1977-07-04 Forming method of charge guide layer for charge transfer device

Publications (1)

Publication Number Publication Date
JPS5414178A true JPS5414178A (en) 1979-02-02

Family

ID=13713441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8026477A Pending JPS5414178A (en) 1977-07-04 1977-07-04 Forming method of charge guide layer for charge transfer device

Country Status (1)

Country Link
JP (1) JPS5414178A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247959A (en) * 1975-10-08 1977-04-16 Sanyo Kokusaku Pulp Co Improving method of taste of saccharide sweetening preparation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247959A (en) * 1975-10-08 1977-04-16 Sanyo Kokusaku Pulp Co Improving method of taste of saccharide sweetening preparation
JPS5414177B2 (en) * 1975-10-08 1979-06-05

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