JPS5412267B2 - - Google Patents
Info
- Publication number
- JPS5412267B2 JPS5412267B2 JP1437776A JP1437776A JPS5412267B2 JP S5412267 B2 JPS5412267 B2 JP S5412267B2 JP 1437776 A JP1437776 A JP 1437776A JP 1437776 A JP1437776 A JP 1437776A JP S5412267 B2 JPS5412267 B2 JP S5412267B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
- C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7504325A FR2300616A1 (fr) | 1975-02-12 | 1975-02-12 | Procede de synthese de composes semi-conducteurs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51115769A JPS51115769A (en) | 1976-10-12 |
| JPS5412267B2 true JPS5412267B2 (xx) | 1979-05-22 |
Family
ID=9151100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1437776A Granted JPS51115769A (en) | 1975-02-12 | 1976-02-12 | Seniconductor compound and method of producucing single crystal thereof |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS51115769A (xx) |
| BE (1) | BE838425A (xx) |
| DE (1) | DE2605125A1 (xx) |
| FR (1) | FR2300616A1 (xx) |
| GB (1) | GB1502087A (xx) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6155073U (xx) * | 1984-09-11 | 1986-04-14 | ||
| JPS63195187A (ja) * | 1987-02-06 | 1988-08-12 | Furukawa Electric Co Ltd:The | 化合物半導体結晶成長装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1494831A (fr) * | 1966-07-05 | 1967-09-15 | Radiotechnique Coprim | Procédé de fabrication d'un monocristal et dispositif de mise en oeuvre |
| JPS499183A (xx) * | 1972-05-11 | 1974-01-26 |
-
1975
- 1975-02-12 FR FR7504325A patent/FR2300616A1/fr active Granted
-
1976
- 1976-02-10 BE BE164213A patent/BE838425A/xx unknown
- 1976-02-10 DE DE19762605125 patent/DE2605125A1/de not_active Withdrawn
- 1976-02-10 GB GB511376A patent/GB1502087A/en not_active Expired
- 1976-02-12 JP JP1437776A patent/JPS51115769A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1494831A (fr) * | 1966-07-05 | 1967-09-15 | Radiotechnique Coprim | Procédé de fabrication d'un monocristal et dispositif de mise en oeuvre |
| JPS499183A (xx) * | 1972-05-11 | 1974-01-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51115769A (en) | 1976-10-12 |
| FR2300616A1 (fr) | 1976-09-10 |
| GB1502087A (en) | 1978-02-22 |
| BE838425A (fr) | 1976-08-10 |
| FR2300616B1 (xx) | 1977-07-22 |
| DE2605125A1 (de) | 1976-08-26 |