JPS539712B2 - - Google Patents
Info
- Publication number
- JPS539712B2 JPS539712B2 JP4961272A JP4961272A JPS539712B2 JP S539712 B2 JPS539712 B2 JP S539712B2 JP 4961272 A JP4961272 A JP 4961272A JP 4961272 A JP4961272 A JP 4961272A JP S539712 B2 JPS539712 B2 JP S539712B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- H10D64/0116—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P50/246—
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Led Devices (AREA)
- ing And Chemical Polishing (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4961272A JPS539712B2 (cg-RX-API-DMAC10.html) | 1972-05-18 | 1972-05-18 | |
| DE2325106A DE2325106A1 (de) | 1972-05-18 | 1973-05-17 | Halbleiter und verfahren zur gasaetzung von halbleiterelementen |
| US361265A US3923569A (en) | 1972-05-18 | 1973-05-17 | Method of etching a semiconductor element |
| FR7317978A FR2184995B1 (cg-RX-API-DMAC10.html) | 1972-05-18 | 1973-05-17 | |
| GB2373673A GB1426600A (en) | 1972-05-18 | 1973-05-18 | Method of etching a semiconductor element |
| CA171,822A CA988628A (en) | 1972-05-18 | 1973-05-18 | Method of etching a semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4961272A JPS539712B2 (cg-RX-API-DMAC10.html) | 1972-05-18 | 1972-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4916378A JPS4916378A (cg-RX-API-DMAC10.html) | 1974-02-13 |
| JPS539712B2 true JPS539712B2 (cg-RX-API-DMAC10.html) | 1978-04-07 |
Family
ID=12836043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4961272A Expired JPS539712B2 (cg-RX-API-DMAC10.html) | 1972-05-18 | 1972-05-18 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3923569A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS539712B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA988628A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2325106A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2184995B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1426600A (cg-RX-API-DMAC10.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53113459U (cg-RX-API-DMAC10.html) * | 1977-02-18 | 1978-09-09 | ||
| US4159917A (en) * | 1977-05-27 | 1979-07-03 | Eastman Kodak Company | Method for use in the manufacture of semiconductor devices |
| US4207138A (en) * | 1979-01-17 | 1980-06-10 | Rca Corporation | Mercury vapor leaching from microelectronic substrates |
| JPS55123958A (en) * | 1979-03-15 | 1980-09-24 | Tokyo Shibaura Electric Co | Air conditioner |
| US4366186A (en) * | 1979-09-27 | 1982-12-28 | Bell Telephone Laboratories, Incorporated | Ohmic contact to p-type InP |
| US4285763A (en) * | 1980-01-29 | 1981-08-25 | Bell Telephone Laboratories, Incorporated | Reactive ion etching of III-V semiconductor compounds |
| US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
| US4689115A (en) * | 1985-04-26 | 1987-08-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Gaseous etching process |
| US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
| FR3038127B1 (fr) * | 2015-06-24 | 2017-06-23 | Commissariat Energie Atomique | Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6501786A (cg-RX-API-DMAC10.html) * | 1964-02-26 | 1965-08-27 | ||
| FR1450842A (fr) * | 1964-07-20 | 1966-06-24 | Siemens Ag | Procédé pour réaliser des couches d'oxyde, planes et très pures, sur des monocristaux de silicium |
| US3390011A (en) * | 1965-03-23 | 1968-06-25 | Texas Instruments Inc | Method of treating planar junctions |
| US3518132A (en) * | 1966-07-12 | 1970-06-30 | Us Army | Corrosive vapor etching process for semiconductors using combined vapors of hydrogen fluoride and nitrous oxide |
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1972
- 1972-05-18 JP JP4961272A patent/JPS539712B2/ja not_active Expired
-
1973
- 1973-05-17 DE DE2325106A patent/DE2325106A1/de active Pending
- 1973-05-17 US US361265A patent/US3923569A/en not_active Expired - Lifetime
- 1973-05-17 FR FR7317978A patent/FR2184995B1/fr not_active Expired
- 1973-05-18 CA CA171,822A patent/CA988628A/en not_active Expired
- 1973-05-18 GB GB2373673A patent/GB1426600A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| USB361265I5 (cg-RX-API-DMAC10.html) | 1975-01-28 |
| FR2184995A1 (cg-RX-API-DMAC10.html) | 1973-12-28 |
| GB1426600A (en) | 1976-03-03 |
| US3923569A (en) | 1975-12-02 |
| JPS4916378A (cg-RX-API-DMAC10.html) | 1974-02-13 |
| CA988628A (en) | 1976-05-04 |
| FR2184995B1 (cg-RX-API-DMAC10.html) | 1976-05-28 |
| DE2325106A1 (de) | 1973-11-29 |