JPS539279A - Annealing method for metallic oxide single crystal - Google Patents
Annealing method for metallic oxide single crystalInfo
- Publication number
- JPS539279A JPS539279A JP8287876A JP8287876A JPS539279A JP S539279 A JPS539279 A JP S539279A JP 8287876 A JP8287876 A JP 8287876A JP 8287876 A JP8287876 A JP 8287876A JP S539279 A JPS539279 A JP S539279A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- metallic oxide
- annealing method
- oxide single
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8287876A JPS539279A (en) | 1976-07-14 | 1976-07-14 | Annealing method for metallic oxide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8287876A JPS539279A (en) | 1976-07-14 | 1976-07-14 | Annealing method for metallic oxide single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS539279A true JPS539279A (en) | 1978-01-27 |
| JPS544710B2 JPS544710B2 (enrdf_load_stackoverflow) | 1979-03-09 |
Family
ID=13786532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8287876A Granted JPS539279A (en) | 1976-07-14 | 1976-07-14 | Annealing method for metallic oxide single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS539279A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545900A (en) * | 1977-06-16 | 1979-01-17 | Toshiba Corp | Method of heat treating single crystal |
| JPS63310800A (ja) * | 1987-06-10 | 1988-12-19 | Fujitsu Ltd | 単結晶の単一分域化方法 |
| WO2005038097A1 (ja) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | タンタル酸リチウム基板およびその製造方法 |
| US7442250B2 (en) | 2003-10-16 | 2008-10-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
| US7713511B2 (en) | 2003-10-16 | 2010-05-11 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and process for its manufacture |
-
1976
- 1976-07-14 JP JP8287876A patent/JPS539279A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545900A (en) * | 1977-06-16 | 1979-01-17 | Toshiba Corp | Method of heat treating single crystal |
| JPS63310800A (ja) * | 1987-06-10 | 1988-12-19 | Fujitsu Ltd | 単結晶の単一分域化方法 |
| WO2005038097A1 (ja) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | タンタル酸リチウム基板およびその製造方法 |
| US7442250B2 (en) | 2003-10-16 | 2008-10-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
| US7628853B2 (en) | 2003-10-16 | 2009-12-08 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and process for its manufacture |
| US7713511B2 (en) | 2003-10-16 | 2010-05-11 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and process for its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS544710B2 (enrdf_load_stackoverflow) | 1979-03-09 |
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