JPS5390890A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5390890A
JPS5390890A JP500877A JP500877A JPS5390890A JP S5390890 A JPS5390890 A JP S5390890A JP 500877 A JP500877 A JP 500877A JP 500877 A JP500877 A JP 500877A JP S5390890 A JPS5390890 A JP S5390890A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
linearity
stripe
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP500877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5628392B2 (US07642317-20100105-C00010.png
Inventor
Nobuo Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP500877A priority Critical patent/JPS5390890A/ja
Priority to US05/866,959 priority patent/US4163976A/en
Priority to GB880/78A priority patent/GB1593212A/en
Priority to DE2802173A priority patent/DE2802173C3/de
Priority to FR7801554A priority patent/FR2378385A1/fr
Publication of JPS5390890A publication Critical patent/JPS5390890A/ja
Publication of JPS5628392B2 publication Critical patent/JPS5628392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP500877A 1977-01-21 1977-01-21 Semiconductor laser device Granted JPS5390890A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP500877A JPS5390890A (en) 1977-01-21 1977-01-21 Semiconductor laser device
US05/866,959 US4163976A (en) 1977-01-21 1978-01-05 Semiconductor laser device
GB880/78A GB1593212A (en) 1977-01-21 1978-01-10 Semiconductor laser device
DE2802173A DE2802173C3 (de) 1977-01-21 1978-01-19 Halbleiterlaseranordnung
FR7801554A FR2378385A1 (fr) 1977-01-21 1978-01-19 Dispositif laser a semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP500877A JPS5390890A (en) 1977-01-21 1977-01-21 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5390890A true JPS5390890A (en) 1978-08-10
JPS5628392B2 JPS5628392B2 (US07642317-20100105-C00010.png) 1981-07-01

Family

ID=11599511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP500877A Granted JPS5390890A (en) 1977-01-21 1977-01-21 Semiconductor laser device

Country Status (5)

Country Link
US (1) US4163976A (US07642317-20100105-C00010.png)
JP (1) JPS5390890A (US07642317-20100105-C00010.png)
DE (1) DE2802173C3 (US07642317-20100105-C00010.png)
FR (1) FR2378385A1 (US07642317-20100105-C00010.png)
GB (1) GB1593212A (US07642317-20100105-C00010.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511400A (en) * 1978-07-03 1980-01-26 Xerox Corp Injection laser
JP2007251064A (ja) * 2006-03-17 2007-09-27 Toyota Central Res & Dev Lab Inc 半導体レーザー装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
JPS62144378A (ja) * 1985-12-18 1987-06-27 Sony Corp 分布帰還覆半導体レ−ザ−

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511400A (en) * 1978-07-03 1980-01-26 Xerox Corp Injection laser
JPH036676B2 (US07642317-20100105-C00010.png) * 1978-07-03 1991-01-30 Xerox Corp
JP2007251064A (ja) * 2006-03-17 2007-09-27 Toyota Central Res & Dev Lab Inc 半導体レーザー装置

Also Published As

Publication number Publication date
DE2802173C3 (de) 1980-11-13
JPS5628392B2 (US07642317-20100105-C00010.png) 1981-07-01
DE2802173A1 (de) 1978-07-27
FR2378385B1 (US07642317-20100105-C00010.png) 1981-09-04
GB1593212A (en) 1981-07-15
US4163976A (en) 1979-08-07
DE2802173B2 (de) 1980-03-13
FR2378385A1 (fr) 1978-08-18

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