JPS536518B2 - - Google Patents

Info

Publication number
JPS536518B2
JPS536518B2 JP14968575A JP14968575A JPS536518B2 JP S536518 B2 JPS536518 B2 JP S536518B2 JP 14968575 A JP14968575 A JP 14968575A JP 14968575 A JP14968575 A JP 14968575A JP S536518 B2 JPS536518 B2 JP S536518B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14968575A
Other languages
Japanese (ja)
Other versions
JPS5185687A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5185687A publication Critical patent/JPS5185687A/ja
Publication of JPS536518B2 publication Critical patent/JPS536518B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP14968575A 1974-12-17 1975-12-17 Expired JPS536518B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB54484/74A GB1533657A (en) 1974-12-17 1974-12-17 Electronic solid state devices

Publications (2)

Publication Number Publication Date
JPS5185687A JPS5185687A (enExample) 1976-07-27
JPS536518B2 true JPS536518B2 (enExample) 1978-03-08

Family

ID=10471155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14968575A Expired JPS536518B2 (enExample) 1974-12-17 1975-12-17

Country Status (4)

Country Link
JP (1) JPS536518B2 (enExample)
DE (1) DE2555014A1 (enExample)
FR (1) FR2295573A1 (enExample)
GB (1) GB1533657A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
GB8602544D0 (en) * 1986-02-03 1986-03-12 Atomic Energy Authority Uk Sensor
AU3617699A (en) 1998-04-22 1999-11-08 Cambridge Consultants Limited Electroluminescent devices
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745504A (en) * 1971-03-22 1973-07-10 Photophysics Impregnated porous photoconductive device and method of manufacture
GB1444951A (en) * 1973-06-18 1976-08-04 Mullard Ltd Electronic solid state devices

Also Published As

Publication number Publication date
GB1533657A (en) 1978-11-29
JPS5185687A (enExample) 1976-07-27
FR2295573B1 (enExample) 1978-12-08
FR2295573A1 (fr) 1976-07-16
DE2555014A1 (de) 1976-06-24

Similar Documents

Publication Publication Date Title
FI753656A7 (enExample)
FR2256927B1 (enExample)
FI753359A7 (enExample)
FR2295573B1 (enExample)
FI751753A7 (enExample)
DK115575A (enExample)
FR2236328B1 (enExample)
DK631974A (enExample)
AU7474374A (enExample)
FI753463A7 (enExample)
BG20478A1 (enExample)
BG20033A1 (enExample)
DD121945A5 (enExample)
DD117754A1 (enExample)
DD115353A5 (enExample)
CH595978A5 (enExample)
CH593165A5 (enExample)
CH591610A5 (enExample)
CH586765A5 (enExample)
CH580777A5 (enExample)
CH578743A5 (enExample)
CH573858A5 (enExample)
BG19828A1 (enExample)
BG20438A1 (enExample)
BG20224A1 (enExample)