FR2295573A1 - Perfectionnements aux dispositifs electroniques du type a l'etat solide - Google Patents

Perfectionnements aux dispositifs electroniques du type a l'etat solide

Info

Publication number
FR2295573A1
FR2295573A1 FR7538585A FR7538585A FR2295573A1 FR 2295573 A1 FR2295573 A1 FR 2295573A1 FR 7538585 A FR7538585 A FR 7538585A FR 7538585 A FR7538585 A FR 7538585A FR 2295573 A1 FR2295573 A1 FR 2295573A1
Authority
FR
France
Prior art keywords
electronic devices
solid state
state type
type
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7538585A
Other languages
English (en)
French (fr)
Other versions
FR2295573B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2295573A1 publication Critical patent/FR2295573A1/fr
Application granted granted Critical
Publication of FR2295573B1 publication Critical patent/FR2295573B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets
FR7538585A 1974-12-17 1975-12-17 Perfectionnements aux dispositifs electroniques du type a l'etat solide Granted FR2295573A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB54484/74A GB1533657A (en) 1974-12-17 1974-12-17 Electronic solid state devices

Publications (2)

Publication Number Publication Date
FR2295573A1 true FR2295573A1 (fr) 1976-07-16
FR2295573B1 FR2295573B1 (enExample) 1978-12-08

Family

ID=10471155

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538585A Granted FR2295573A1 (fr) 1974-12-17 1975-12-17 Perfectionnements aux dispositifs electroniques du type a l'etat solide

Country Status (4)

Country Link
JP (1) JPS536518B2 (enExample)
DE (1) DE2555014A1 (enExample)
FR (1) FR2295573A1 (enExample)
GB (1) GB1533657A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
GB8602544D0 (en) * 1986-02-03 1986-03-12 Atomic Energy Authority Uk Sensor
AU3617699A (en) 1998-04-22 1999-11-08 Cambridge Consultants Limited Electroluminescent devices
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745504A (en) * 1971-03-22 1973-07-10 Photophysics Impregnated porous photoconductive device and method of manufacture
FR2233715A1 (enExample) * 1973-06-18 1975-01-10 Philips Nv

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745504A (en) * 1971-03-22 1973-07-10 Photophysics Impregnated porous photoconductive device and method of manufacture
FR2233715A1 (enExample) * 1973-06-18 1975-01-10 Philips Nv

Also Published As

Publication number Publication date
GB1533657A (en) 1978-11-29
JPS536518B2 (enExample) 1978-03-08
JPS5185687A (enExample) 1976-07-27
FR2295573B1 (enExample) 1978-12-08
DE2555014A1 (de) 1976-06-24

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Legal Events

Date Code Title Description
ST Notification of lapse