JPS536358B1 - - Google Patents

Info

Publication number
JPS536358B1
JPS536358B1 JP256871A JP256871A JPS536358B1 JP S536358 B1 JPS536358 B1 JP S536358B1 JP 256871 A JP256871 A JP 256871A JP 256871 A JP256871 A JP 256871A JP S536358 B1 JPS536358 B1 JP S536358B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP256871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS536358B1 publication Critical patent/JPS536358B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/22—Orthoferrites, e.g. RFeO3 (R= rare earth element) with orthorhombic structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/404—Oxides of alkaline earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
JP256871A 1970-03-04 1971-01-26 Pending JPS536358B1 (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1644770A 1970-03-04 1970-03-04
US1644670A 1970-03-04 1970-03-04

Publications (1)

Publication Number Publication Date
JPS536358B1 true JPS536358B1 (OSRAM) 1978-03-07

Family

ID=26688607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP256871A Pending JPS536358B1 (OSRAM) 1970-03-04 1971-01-26

Country Status (7)

Country Link
US (1) US3645788A (OSRAM)
JP (1) JPS536358B1 (OSRAM)
CA (1) CA939237A (OSRAM)
DE (1) DE2063211C3 (OSRAM)
FR (1) FR2081691B1 (OSRAM)
GB (1) GB1353485A (OSRAM)
NL (1) NL7018848A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837911A (en) * 1971-04-12 1974-09-24 Bell Telephone Labor Inc Magnetic devices utilizing garnet epitaxial materials and method of production
US3932688A (en) * 1973-10-12 1976-01-13 Hitachi, Ltd. Composite magnetic film
US4101707A (en) * 1977-04-04 1978-07-18 Rockwell International Corporation Homogeneous multilayer dielectric mirror and method of making same
US5482003A (en) * 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE569854A (OSRAM) * 1957-02-28
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals
US3332796A (en) * 1961-06-26 1967-07-25 Philips Corp Preparing nickel ferrite single crystals on a monocrystalline substrate
US3511702A (en) * 1965-08-20 1970-05-12 Motorola Inc Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3429740A (en) * 1965-09-24 1969-02-25 North American Rockwell Growing garnet on non-garnet single crystal
US3460116A (en) * 1966-09-16 1969-08-05 Bell Telephone Labor Inc Magnetic domain propagation circuit
US3421933A (en) * 1966-12-14 1969-01-14 North American Rockwell Spinel ferrite epitaxial composite

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS=1958 *
JOURNAL OF CRYSTAL GROWTH=1968US *
PHYSICAL REVIEW=1966 *

Also Published As

Publication number Publication date
DE2063211B2 (de) 1978-09-21
DE2063211C3 (de) 1979-05-17
GB1353485A (en) 1974-05-15
FR2081691A1 (OSRAM) 1971-12-10
CA939237A (en) 1974-01-01
US3645788A (en) 1972-02-29
DE2063211A1 (de) 1971-09-23
NL7018848A (OSRAM) 1971-09-07
FR2081691B1 (OSRAM) 1975-01-17

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