JPS535994B2 - - Google Patents

Info

Publication number
JPS535994B2
JPS535994B2 JP11002674A JP11002674A JPS535994B2 JP S535994 B2 JPS535994 B2 JP S535994B2 JP 11002674 A JP11002674 A JP 11002674A JP 11002674 A JP11002674 A JP 11002674A JP S535994 B2 JPS535994 B2 JP S535994B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11002674A
Other languages
Japanese (ja)
Other versions
JPS5179687A (US20030199744A1-20031023-C00003.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11002674A priority Critical patent/JPS535994B2/ja
Priority to US05/611,838 priority patent/US4022652A/en
Publication of JPS5179687A publication Critical patent/JPS5179687A/ja
Publication of JPS535994B2 publication Critical patent/JPS535994B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP11002674A 1974-09-26 1974-09-26 Expired JPS535994B2 (US20030199744A1-20031023-C00003.png)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11002674A JPS535994B2 (US20030199744A1-20031023-C00003.png) 1974-09-26 1974-09-26
US05/611,838 US4022652A (en) 1974-09-26 1975-09-09 Method of growing multiple monocrystalline layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11002674A JPS535994B2 (US20030199744A1-20031023-C00003.png) 1974-09-26 1974-09-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10576877A Division JPS5337184A (en) 1977-09-05 1977-09-05 Epitaxially growing method in liquid phase

Publications (2)

Publication Number Publication Date
JPS5179687A JPS5179687A (US20030199744A1-20031023-C00003.png) 1976-07-12
JPS535994B2 true JPS535994B2 (US20030199744A1-20031023-C00003.png) 1978-03-03

Family

ID=14525218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11002674A Expired JPS535994B2 (US20030199744A1-20031023-C00003.png) 1974-09-26 1974-09-26

Country Status (2)

Country Link
US (1) US4022652A (US20030199744A1-20031023-C00003.png)
JP (1) JPS535994B2 (US20030199744A1-20031023-C00003.png)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365997A (en) * 1976-11-25 1978-06-12 Toshiba Corp Manufacturing process of tantalum acid lithium single crystal
DE2903061A1 (de) * 1979-01-26 1980-08-07 Heliotronic Gmbh Verfahren zur herstellung grosskristalliner vorzugsorientierter siliciumfolien
US4353757A (en) * 1979-02-12 1982-10-12 Mobil Tyco Solar Energy Corporation Displaced capillary dies
US4430305A (en) * 1979-02-12 1984-02-07 Mobil Solar Energy Corporation Displaced capillary dies
US4334948A (en) * 1981-02-23 1982-06-15 Rca Corporation Method of and apparatus for growing crystal ribbon
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US6372919B1 (en) 2001-01-11 2002-04-16 Dov Pharmaceutical, Inc. (+)-1-(3,4-dichlorophenyl)-3-azabicyclo[3.1.0]hexane, compositions thereof, and uses as an anti-depressant agent
US6569887B2 (en) * 2001-08-24 2003-05-27 Dov Pharmaceuticals Inc. (−)-1-(3,4-Dichlorophenyl)-3-azabicyclo[3.1.0]hexane, compositions thereof, and uses as a dopamine-reuptake
US20060173064A1 (en) * 2001-08-24 2006-08-03 Lippa Arnold S (-)-1-(3,4-Dichlorophenyl)-3-azabi cyclo[3.1.0]hexane, compositions thereof, and uses for treating alcohol-related disorders
US20080081834A1 (en) 2002-07-31 2008-04-03 Lippa Arnold S Methods and compositions employing bicifadine for treating disability or functional impairment associated with acute pain, chronic pain, or neuropathic disorders
US20070043100A1 (en) * 2005-08-16 2007-02-22 Hagen Eric J Novel polymorphs of azabicyclohexane
US20060100263A1 (en) * 2004-11-05 2006-05-11 Anthony Basile Antipyretic compositions and methods
JP5184354B2 (ja) 2005-07-27 2013-04-17 ユーシミクス バイオサイエンス，インク． 新規１−アリール−３−アザビシクロ［３．１．０］ヘキサン：調製および神経精神障害の処理への使用
US20080045725A1 (en) * 2006-04-28 2008-02-21 Murry Jerry A Process For The Synthesis of (+) And (-)-1-(3,4-Dichlorophenyl)-3-Azabicyclo[3.1.0]Hexane
US8138377B2 (en) * 2006-11-07 2012-03-20 Dov Pharmaceutical, Inc. Arylbicyclo[3.1.0]hexylamines and methods and compositions for their preparation and use
US20080269348A1 (en) * 2006-11-07 2008-10-30 Phil Skolnick Novel Arylbicyclo[3.1.0]Hexylamines And Methods And Compositions For Their Preparation And Use
US9133159B2 (en) 2007-06-06 2015-09-15 Neurovance, Inc. 1-heteroaryl-3-azabicyclo[3.1.0]hexanes, methods for their preparation and their use as medicaments
US20090069374A1 (en) * 2007-06-06 2009-03-12 Phil Skolnick Novel 1-Heteroaryl-3-Azabicyclo[3.1.0]Hexanes, Methods For Their Preparation And Their Use As Medicaments

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE85983C (US20030199744A1-20031023-C00003.png) *
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
GB826800A (en) * 1957-08-16 1960-01-20 Standard Telephones Cables Ltd Improvements in or relating to semi-conductor devices
US2992517A (en) * 1958-08-11 1961-07-18 American Optical Corp Method and apparatus for use in the fabrication of light-conducting devices
GB913676A (en) * 1959-11-19 1962-12-28 Westinghouse Electric Corp Treatment of semiconductor materials
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
DE1789064A1 (de) * 1968-09-30 1971-12-30 Siemens Ag Verfahren zum Herstellen epitaktischer Schichten aus elektrisch isolierendem Material unter Verwendung eines aus Halbleitermaterial bestehenden Traegerkoerpers
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase

Also Published As

Publication number Publication date
JPS5179687A (US20030199744A1-20031023-C00003.png) 1976-07-12
US4022652A (en) 1977-05-10

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