GB913676A - Treatment of semiconductor materials - Google Patents
Treatment of semiconductor materialsInfo
- Publication number
- GB913676A GB913676A GB3330460A GB3330460A GB913676A GB 913676 A GB913676 A GB 913676A GB 3330460 A GB3330460 A GB 3330460A GB 3330460 A GB3330460 A GB 3330460A GB 913676 A GB913676 A GB 913676A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- pulled
- melt
- pict
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0913676/III/1> <PICT:0913676/III/2> <PICT:0913676/III/3> A dentritic crystal pulled from a supercooled melt using a seed crystal orientated as shown in Fig. 2 is coated on at least one face with a foreign substance deposited from the vapour state. The coating may be simultaneously or subsequently fused on to the dendritic crystal. Semi-conductor crystal materials specified are silicon and germanium, and compounds of aluminium, gallium, or indium and antimony, arsenic, or phosphorus. A doping agent may be present in the melt. Pulling may be effected in a vacuum or protective gas atmosphere. The protective atmosphere may comprise argon, helium, hydrogen, or nitrogen. Gallium arsenide may be pulled in an atmosphere of arsenic. The foreign substance may be gold, tin, or silver; aluminium, boron, gallium, or indium (p-type dopants); or antimony, arsenic, bismuth, or phosphorus (n-type dopants). A mixture of foreign substances may be deposited, e.g. a bismuth-boron-gold alloy. One substance may be deposited on one face and another substance on the opposite face, e.g. the product may comprise a central layer of n-type germanium between intermediate layers of p-type germanium containing aluminium and indium, respectively (Fig. 5). Masking may be used during coating, or etching may be used after coating, in order to produce a desired pattern. As shown in Fig. 1, a dendritic crystal 50 is pulled from a melt 18 contained in a covered graphite crucible 16 heated by an induction coil 20 and connected with a reservoir 26. The pulled crystal is passed through rollers 60, 62, 64 and 66, which may be of neoprene rubber, nylon, polytetrafluoroethylene, or polytrifluoromonochloroethylene, into an upper evacuated chamber, which may be maintained at a pressure of less than 1 micron, where it is coated with a desposit from vapour produced from melt in a vessel 70, thereafter passed through a fusion chamber 80, and finally wound on a drum 90. Specifications 889,058, 911,359, 913,674 and 913,675 are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85413459A | 1959-11-19 | 1959-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB913676A true GB913676A (en) | 1962-12-28 |
Family
ID=25317822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3330460A Expired GB913676A (en) | 1959-11-19 | 1960-09-28 | Treatment of semiconductor materials |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH412816A (en) |
| GB (1) | GB913676A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535994B2 (en) * | 1974-09-26 | 1978-03-03 | ||
| US4078897A (en) * | 1975-04-11 | 1978-03-14 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
| US4186173A (en) * | 1975-04-11 | 1980-01-29 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
| US6143633A (en) * | 1995-10-05 | 2000-11-07 | Ebara Solar, Inc. | In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon |
-
1960
- 1960-09-28 GB GB3330460A patent/GB913676A/en not_active Expired
- 1960-11-17 CH CH1287960A patent/CH412816A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH412816A (en) | 1966-05-15 |
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