JPS5354181A - Chemical evaporation apparatus - Google Patents

Chemical evaporation apparatus

Info

Publication number
JPS5354181A
JPS5354181A JP13015976A JP13015976A JPS5354181A JP S5354181 A JPS5354181 A JP S5354181A JP 13015976 A JP13015976 A JP 13015976A JP 13015976 A JP13015976 A JP 13015976A JP S5354181 A JPS5354181 A JP S5354181A
Authority
JP
Japan
Prior art keywords
sample
evaporation apparatus
chemical evaporation
ejecting
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13015976A
Other languages
Japanese (ja)
Inventor
Toshio Tatsumi
Hideo Yamashita
Hiroshi Yamamoto
Kenichi Oki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13015976A priority Critical patent/JPS5354181A/en
Publication of JPS5354181A publication Critical patent/JPS5354181A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form the film efficiently regardless of the dimensions and the shape of the sample, by opposing the nozzle for ejecting the reaction gas for forming the reaction product on the surface of the sample to the sample and, further, by arranging the nozzles for ejecting the curtain gas around the above nozzle.
JP13015976A 1976-10-28 1976-10-28 Chemical evaporation apparatus Pending JPS5354181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13015976A JPS5354181A (en) 1976-10-28 1976-10-28 Chemical evaporation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13015976A JPS5354181A (en) 1976-10-28 1976-10-28 Chemical evaporation apparatus

Publications (1)

Publication Number Publication Date
JPS5354181A true JPS5354181A (en) 1978-05-17

Family

ID=15027399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13015976A Pending JPS5354181A (en) 1976-10-28 1976-10-28 Chemical evaporation apparatus

Country Status (1)

Country Link
JP (1) JPS5354181A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763292U (en) * 1980-10-01 1982-04-15
JPS6179771A (en) * 1984-09-26 1986-04-23 Applied Material Japan Kk Method and device for vapor growth
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
FR2679898A1 (en) * 1991-07-31 1993-02-05 Air Liquide PROCESS FOR FORMING A SILICA LAYER ON A SURFACE OF A GLASS OBJECT.
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763292U (en) * 1980-10-01 1982-04-15
JPS6179771A (en) * 1984-09-26 1986-04-23 Applied Material Japan Kk Method and device for vapor growth
JPS6338430B2 (en) * 1984-09-26 1988-07-29 Applied Materials Japan
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US6022811A (en) * 1990-12-28 2000-02-08 Mitsubishi Denki Kabushiki Kaisha Method of uniform CVD
FR2679898A1 (en) * 1991-07-31 1993-02-05 Air Liquide PROCESS FOR FORMING A SILICA LAYER ON A SURFACE OF A GLASS OBJECT.
US5997948A (en) * 1991-07-31 1999-12-07 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for producing a deposit comprising silica on the surface of a glass product
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices

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