JPS5347669B1 - - Google Patents

Info

Publication number
JPS5347669B1
JPS5347669B1 JP79871A JP79871A JPS5347669B1 JP S5347669 B1 JPS5347669 B1 JP S5347669B1 JP 79871 A JP79871 A JP 79871A JP 79871 A JP79871 A JP 79871A JP S5347669 B1 JPS5347669 B1 JP S5347669B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP79871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP79871A priority Critical patent/JPS5347669B1/ja
Priority to US05/590,082 priority patent/US3967981A/en
Publication of JPS5347669B1 publication Critical patent/JPS5347669B1/ja
Pending legal-status Critical Current

Links

JP79871A 1971-01-14 1971-01-14 Pending JPS5347669B1 (nl)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP79871A JPS5347669B1 (nl) 1971-01-14 1971-01-14
US05/590,082 US3967981A (en) 1971-01-14 1975-06-25 Method for manufacturing a semiconductor field effort transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP79871A JPS5347669B1 (nl) 1971-01-14 1971-01-14

Publications (1)

Publication Number Publication Date
JPS5347669B1 true JPS5347669B1 (nl) 1978-12-22

Family

ID=11483684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP79871A Pending JPS5347669B1 (nl) 1971-01-14 1971-01-14

Country Status (1)

Country Link
JP (1) JPS5347669B1 (nl)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1930669A1 (de) * 1968-06-17 1970-06-11 Nippon Electric Co Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
DE1930669A1 (de) * 1968-06-17 1970-06-11 Nippon Electric Co Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung

Similar Documents

Publication Publication Date Title
AU2658571A (nl)
AU2691671A (nl)
AU2684071A (nl)
AU2894671A (nl)
AU2941471A (nl)
AU2952271A (nl)
AU2742671A (nl)
AU3005371A (nl)
AU2485671A (nl)
AU2564071A (nl)
JPS5347669B1 (nl)
AU3038671A (nl)
AU2907471A (nl)
AU2669471A (nl)
AU2706571A (nl)
AU2654071A (nl)
AU2588771A (nl)
AU2577671A (nl)
AU2724971A (nl)
AU2938071A (nl)
AU2885171A (nl)
AU2684171A (nl)
AU2726271A (nl)
AU2503871A (nl)
AU2927871A (nl)