JPS5347669B1 - - Google Patents
Info
- Publication number
- JPS5347669B1 JPS5347669B1 JP79871A JP79871A JPS5347669B1 JP S5347669 B1 JPS5347669 B1 JP S5347669B1 JP 79871 A JP79871 A JP 79871A JP 79871 A JP79871 A JP 79871A JP S5347669 B1 JPS5347669 B1 JP S5347669B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP79871A JPS5347669B1 (enExample) | 1971-01-14 | 1971-01-14 | |
| US05/590,082 US3967981A (en) | 1971-01-14 | 1975-06-25 | Method for manufacturing a semiconductor field effort transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP79871A JPS5347669B1 (enExample) | 1971-01-14 | 1971-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5347669B1 true JPS5347669B1 (enExample) | 1978-12-22 |
Family
ID=11483684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP79871A Pending JPS5347669B1 (enExample) | 1971-01-14 | 1971-01-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5347669B1 (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1930669A1 (de) * | 1968-06-17 | 1970-06-11 | Nippon Electric Co | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |
| US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
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1971
- 1971-01-14 JP JP79871A patent/JPS5347669B1/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
| DE1930669A1 (de) * | 1968-06-17 | 1970-06-11 | Nippon Electric Co | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |