JPS5342234B2 - - Google Patents
Info
- Publication number
- JPS5342234B2 JPS5342234B2 JP1659573A JP1659573A JPS5342234B2 JP S5342234 B2 JPS5342234 B2 JP S5342234B2 JP 1659573 A JP1659573 A JP 1659573A JP 1659573 A JP1659573 A JP 1659573A JP S5342234 B2 JPS5342234 B2 JP S5342234B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1659573A JPS5342234B2 (en, 2012) | 1973-02-12 | 1973-02-12 | |
| US05/439,717 US3947864A (en) | 1973-02-12 | 1974-02-05 | Diode-integrated thyristor |
| CA192,223A CA999684A (en) | 1973-02-12 | 1974-02-11 | Diode-integrated thyristor |
| DE19742406431 DE2406431C3 (de) | 1973-02-12 | 1974-02-11 | Thyristor mit integrierter Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1659573A JPS5342234B2 (en, 2012) | 1973-02-12 | 1973-02-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49106779A JPS49106779A (en, 2012) | 1974-10-09 |
| JPS5342234B2 true JPS5342234B2 (en, 2012) | 1978-11-09 |
Family
ID=11920624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1659573A Expired JPS5342234B2 (en, 2012) | 1973-02-12 | 1973-02-12 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3947864A (en, 2012) |
| JP (1) | JPS5342234B2 (en, 2012) |
| CA (1) | CA999684A (en, 2012) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5151290A (ja) * | 1974-10-31 | 1976-05-06 | Tokyo Shibaura Electric Co | Gyakudotsusairisuta |
| JPS51138389A (en) * | 1975-05-27 | 1976-11-29 | Toyo Electric Mfg Co Ltd | Thyristor |
| JPS51151294U (en, 2012) * | 1975-05-29 | 1976-12-03 | ||
| JPS5248986A (en) * | 1975-10-17 | 1977-04-19 | Mitsubishi Electric Corp | Semiconductor temperature sensitive switch element |
| US4357621A (en) * | 1976-05-31 | 1982-11-02 | Tokyo Shibaura Electric Co., Ltd. | Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions |
| JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
| JPS5933272B2 (ja) * | 1978-06-19 | 1984-08-14 | 株式会社日立製作所 | 半導体装置 |
| US4224083A (en) * | 1978-07-31 | 1980-09-23 | Westinghouse Electric Corp. | Dynamic isolation of conductivity modulation states in integrated circuits |
| JPS57109373A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Semiconductor device |
| FR2528233A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de doigt d'emetteur dans un transistor de commutation |
| JPS6084881A (ja) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | 大電力ｍｏｓ ｆｅｔとその製造方法 |
| JPS60154552A (ja) * | 1984-01-23 | 1985-08-14 | Mitsubishi Electric Corp | 電力用半導体装置 |
| CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
| FR2864344B1 (fr) * | 2003-12-18 | 2006-08-11 | St Microelectronics Sa | Composant semiconducteur comprenant des zones a concentration de platine elevee |
| JP5972881B2 (ja) | 2010-09-29 | 2016-08-17 | アーベーベー・テヒノロギー・アーゲー | 逆導通パワー半導体デバイス |
| US8586423B2 (en) | 2011-06-24 | 2013-11-19 | International Business Machines Corporation | Silicon controlled rectifier with stress-enhanced adjustable trigger voltage |
| CN108878522A (zh) * | 2018-07-03 | 2018-11-23 | 西安卫光科技有限公司 | 一种高触发电压可控硅 |
| CN117594438B (zh) * | 2023-11-23 | 2024-06-07 | 扬州国宇电子有限公司 | 一种快恢复二极管的锰掺杂方法及快恢复二极管 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3236698A (en) * | 1964-04-08 | 1966-02-22 | Clevite Corp | Semiconductive device and method of making the same |
| SE313623B (en, 2012) * | 1965-01-30 | 1969-08-18 | Asea Ab | |
| US3440114A (en) * | 1966-10-31 | 1969-04-22 | Texas Instruments Inc | Selective gold doping for high resistivity regions in silicon |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| JPS509153A (en, 2012) * | 1973-05-29 | 1975-01-30 |
-
1973
- 1973-02-12 JP JP1659573A patent/JPS5342234B2/ja not_active Expired
-
1974
- 1974-02-05 US US05/439,717 patent/US3947864A/en not_active Expired - Lifetime
- 1974-02-11 CA CA192,223A patent/CA999684A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA999684A (en) | 1976-11-09 |
| JPS49106779A (en, 2012) | 1974-10-09 |
| US3947864A (en) | 1976-03-30 |
| DE2406431B2 (de) | 1976-08-19 |
| DE2406431A1 (de) | 1974-08-29 |