JPS5338987A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5338987A
JPS5338987A JP11303376A JP11303376A JPS5338987A JP S5338987 A JPS5338987 A JP S5338987A JP 11303376 A JP11303376 A JP 11303376A JP 11303376 A JP11303376 A JP 11303376A JP S5338987 A JPS5338987 A JP S5338987A
Authority
JP
Japan
Prior art keywords
thyristor
prescribed
lowering
high voltage
area rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11303376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5749144B2 (OSRAM
Inventor
Hirotoshi Toida
Junichi Takita
Katsumi Akabane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11303376A priority Critical patent/JPS5338987A/ja
Publication of JPS5338987A publication Critical patent/JPS5338987A/ja
Publication of JPS5749144B2 publication Critical patent/JPS5749144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP11303376A 1976-09-22 1976-09-22 Thyristor Granted JPS5338987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11303376A JPS5338987A (en) 1976-09-22 1976-09-22 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11303376A JPS5338987A (en) 1976-09-22 1976-09-22 Thyristor

Publications (2)

Publication Number Publication Date
JPS5338987A true JPS5338987A (en) 1978-04-10
JPS5749144B2 JPS5749144B2 (OSRAM) 1982-10-20

Family

ID=14601762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11303376A Granted JPS5338987A (en) 1976-09-22 1976-09-22 Thyristor

Country Status (1)

Country Link
JP (1) JPS5338987A (OSRAM)

Also Published As

Publication number Publication date
JPS5749144B2 (OSRAM) 1982-10-20

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