JPS5336431B2 - - Google Patents
Info
- Publication number
- JPS5336431B2 JPS5336431B2 JP11008473A JP11008473A JPS5336431B2 JP S5336431 B2 JPS5336431 B2 JP S5336431B2 JP 11008473 A JP11008473 A JP 11008473A JP 11008473 A JP11008473 A JP 11008473A JP S5336431 B2 JPS5336431 B2 JP S5336431B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/955—Melt-back
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722247710 DE2247710C3 (de) | 1972-09-28 | Flüssigphasen-Epitaxieverfahren und Vorrichtung zu dessen Durchführung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4972182A JPS4972182A (cg-RX-API-DMAC7.html) | 1974-07-12 |
| JPS5336431B2 true JPS5336431B2 (cg-RX-API-DMAC7.html) | 1978-10-03 |
Family
ID=5857691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11008473A Expired JPS5336431B2 (cg-RX-API-DMAC7.html) | 1972-09-28 | 1973-09-28 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3880680A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5336431B2 (cg-RX-API-DMAC7.html) |
| AT (1) | AT341579B (cg-RX-API-DMAC7.html) |
| BE (1) | BE805406A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1004962A (cg-RX-API-DMAC7.html) |
| FR (1) | FR2201131B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1433161A (cg-RX-API-DMAC7.html) |
| IT (1) | IT995486B (cg-RX-API-DMAC7.html) |
| LU (1) | LU68508A1 (cg-RX-API-DMAC7.html) |
| NL (1) | NL7313421A (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080280A (cg-RX-API-DMAC7.html) * | 1973-11-20 | 1975-06-30 | ||
| JPS51111476A (en) * | 1975-03-26 | 1976-10-01 | Sumitomo Electric Ind Ltd | Method of liquid phase epitaxial crystal growth |
| JPS5222478A (en) * | 1975-08-11 | 1977-02-19 | Siemens Ag | Liquiddphase epitaxial method |
| JPS52115783A (en) * | 1976-03-24 | 1977-09-28 | Sumitomo Electric Ind Ltd | Liquid phase epitaxial growth |
| US4160682A (en) * | 1978-03-30 | 1979-07-10 | Western Electric Co., Inc. | Depositing materials on stacked semiconductor wafers |
| JPS5575998A (en) * | 1978-12-04 | 1980-06-07 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growing method |
| US4235191A (en) * | 1979-03-02 | 1980-11-25 | Western Electric Company, Inc. | Apparatus for depositing materials on stacked semiconductor wafers |
| US4597823A (en) * | 1983-09-12 | 1986-07-01 | Cook Melvin S | Rapid LPE crystal growth |
| US4594126A (en) * | 1983-09-12 | 1986-06-10 | Cook Melvin S | Growth of thin epitaxial films on moving substrates from flowing solutions |
| US5585305A (en) * | 1991-08-29 | 1996-12-17 | Shin-Etsu Handotai Co. Ltd. | Method for fabricating a semiconductor device |
| EP1027717B1 (en) * | 1997-10-27 | 2004-09-08 | Crystalls and Technologies, Ltd. | Cathodoluminescent screen with a columnar structure, and the method for its preparation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3689330A (en) * | 1969-04-18 | 1972-09-05 | Sony Corp | Method of making a luminescent diode |
| BE754519A (fr) * | 1969-08-06 | 1971-02-08 | Motorola Inc | Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs |
| US3759759A (en) * | 1970-01-29 | 1973-09-18 | Fairchild Camera Instr Co | Push pull method for solution epitaxial growth of iii v compounds |
| BE788374A (fr) * | 1971-12-08 | 1973-01-02 | Rca Corp | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat |
-
1973
- 1973-08-07 AT AT692873A patent/AT341579B/de not_active IP Right Cessation
- 1973-09-06 GB GB4203573A patent/GB1433161A/en not_active Expired
- 1973-09-25 IT IT29305/73A patent/IT995486B/it active
- 1973-09-26 LU LU68508A patent/LU68508A1/xx unknown
- 1973-09-26 FR FR7334478A patent/FR2201131B1/fr not_active Expired
- 1973-09-27 CA CA182,057A patent/CA1004962A/en not_active Expired
- 1973-09-27 BE BE136122A patent/BE805406A/xx unknown
- 1973-09-27 US US401414A patent/US3880680A/en not_active Expired - Lifetime
- 1973-09-28 NL NL7313421A patent/NL7313421A/xx not_active Application Discontinuation
- 1973-09-28 JP JP11008473A patent/JPS5336431B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2201131A1 (cg-RX-API-DMAC7.html) | 1974-04-26 |
| GB1433161A (en) | 1976-04-22 |
| FR2201131B1 (cg-RX-API-DMAC7.html) | 1977-03-11 |
| NL7313421A (cg-RX-API-DMAC7.html) | 1974-04-01 |
| CA1004962A (en) | 1977-02-08 |
| JPS4972182A (cg-RX-API-DMAC7.html) | 1974-07-12 |
| DE2247710A1 (de) | 1974-04-11 |
| DE2247710B2 (de) | 1977-05-05 |
| BE805406A (fr) | 1974-03-27 |
| IT995486B (it) | 1975-11-10 |
| LU68508A1 (cg-RX-API-DMAC7.html) | 1974-04-02 |
| AT341579B (de) | 1978-02-10 |
| ATA692873A (de) | 1977-06-15 |
| US3880680A (en) | 1975-04-29 |