JPS5334476B2 - - Google Patents
Info
- Publication number
- JPS5334476B2 JPS5334476B2 JP15285575A JP15285575A JPS5334476B2 JP S5334476 B2 JPS5334476 B2 JP S5334476B2 JP 15285575 A JP15285575 A JP 15285575A JP 15285575 A JP15285575 A JP 15285575A JP S5334476 B2 JPS5334476 B2 JP S5334476B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50152855A JPS5276890A (en) | 1975-12-23 | 1975-12-23 | Production of g#a#-a#a# hetero-junction semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50152855A JPS5276890A (en) | 1975-12-23 | 1975-12-23 | Production of g#a#-a#a# hetero-junction semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5276890A JPS5276890A (en) | 1977-06-28 |
| JPS5334476B2 true JPS5334476B2 (de) | 1978-09-20 |
Family
ID=15549589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50152855A Granted JPS5276890A (en) | 1975-12-23 | 1975-12-23 | Production of g#a#-a#a# hetero-junction semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5276890A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2734471C2 (de) * | 1977-07-30 | 1986-09-18 | Alfred Teves Gmbh, 6000 Frankfurt | Hydraulischer Bremskraftverstärker |
| JPH01220492A (ja) * | 1988-02-26 | 1989-09-04 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
| JP2963916B2 (ja) * | 1988-12-28 | 1999-10-18 | 新技術事業団 | 面発光型半導体レーザ装置の製造方法 |
| JP2943510B2 (ja) * | 1991-08-09 | 1999-08-30 | 日本電気株式会社 | 可変波長半導体レーザ装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
| JPS4924084A (de) * | 1972-06-26 | 1974-03-04 | ||
| JPS4987278A (de) * | 1972-12-23 | 1974-08-21 |
-
1975
- 1975-12-23 JP JP50152855A patent/JPS5276890A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
| JPS4924084A (de) * | 1972-06-26 | 1974-03-04 | ||
| JPS4987278A (de) * | 1972-12-23 | 1974-08-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5276890A (en) | 1977-06-28 |