JPS533233B2 - - Google Patents
Info
- Publication number
- JPS533233B2 JPS533233B2 JP3976572A JP3976572A JPS533233B2 JP S533233 B2 JPS533233 B2 JP S533233B2 JP 3976572 A JP3976572 A JP 3976572A JP 3976572 A JP3976572 A JP 3976572A JP S533233 B2 JPS533233 B2 JP S533233B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3976572A JPS533233B2 (https=) | 1972-04-20 | 1972-04-20 | |
| GB1869373A GB1425956A (en) | 1972-04-20 | 1973-04-18 | Gate controlled switches |
| NL7305505A NL7305505A (https=) | 1972-04-20 | 1973-04-18 | |
| CA169,178A CA982700A (en) | 1972-04-20 | 1973-04-19 | Gate controlled switch |
| FR7314647A FR2181076B1 (https=) | 1972-04-20 | 1973-04-20 | |
| DE2320412A DE2320412C3 (de) | 1972-04-20 | 1973-04-21 | Verfahren zur Herstellung und Sortierung abschaltbarer Thyristoren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3976572A JPS533233B2 (https=) | 1972-04-20 | 1972-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS493584A JPS493584A (https=) | 1974-01-12 |
| JPS533233B2 true JPS533233B2 (https=) | 1978-02-04 |
Family
ID=12562021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3976572A Expired JPS533233B2 (https=) | 1972-04-20 | 1972-04-20 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS533233B2 (https=) |
| CA (1) | CA982700A (https=) |
| DE (1) | DE2320412C3 (https=) |
| FR (1) | FR2181076B1 (https=) |
| GB (1) | GB1425956A (https=) |
| NL (1) | NL7305505A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS557026B2 (https=) * | 1974-05-15 | 1980-02-21 | ||
| JPS60220971A (ja) * | 1984-04-17 | 1985-11-05 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ及びその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1413219A (fr) * | 1963-09-03 | 1965-10-08 | Gen Electric | Perfectionnement aux semiconducteurs de commutation |
-
1972
- 1972-04-20 JP JP3976572A patent/JPS533233B2/ja not_active Expired
-
1973
- 1973-04-18 NL NL7305505A patent/NL7305505A/xx not_active Application Discontinuation
- 1973-04-18 GB GB1869373A patent/GB1425956A/en not_active Expired
- 1973-04-19 CA CA169,178A patent/CA982700A/en not_active Expired
- 1973-04-20 FR FR7314647A patent/FR2181076B1/fr not_active Expired
- 1973-04-21 DE DE2320412A patent/DE2320412C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2181076A1 (https=) | 1973-11-30 |
| JPS493584A (https=) | 1974-01-12 |
| DE2320412B2 (de) | 1979-01-11 |
| GB1425956A (en) | 1976-02-25 |
| FR2181076B1 (https=) | 1977-08-19 |
| DE2320412C3 (de) | 1979-09-06 |
| CA982700A (en) | 1976-01-27 |
| DE2320412A1 (de) | 1973-10-25 |
| NL7305505A (https=) | 1973-10-23 |