JPS5321835B2 - - Google Patents

Info

Publication number
JPS5321835B2
JPS5321835B2 JP2623073A JP2623073A JPS5321835B2 JP S5321835 B2 JPS5321835 B2 JP S5321835B2 JP 2623073 A JP2623073 A JP 2623073A JP 2623073 A JP2623073 A JP 2623073A JP S5321835 B2 JPS5321835 B2 JP S5321835B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2623073A
Other languages
Japanese (ja)
Other versions
JPS4910666A (ref
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4910666A publication Critical patent/JPS4910666A/ja
Publication of JPS5321835B2 publication Critical patent/JPS5321835B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
JP2623073A 1972-04-06 1973-03-07 Expired JPS5321835B2 (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00241821A US3806382A (en) 1972-04-06 1972-04-06 Vapor-solid impurity diffusion process

Publications (2)

Publication Number Publication Date
JPS4910666A JPS4910666A (ref) 1974-01-30
JPS5321835B2 true JPS5321835B2 (ref) 1978-07-05

Family

ID=22912318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2623073A Expired JPS5321835B2 (ref) 1972-04-06 1973-03-07

Country Status (7)

Country Link
US (1) US3806382A (ref)
JP (1) JPS5321835B2 (ref)
CA (1) CA980665A (ref)
DE (1) DE2316520C3 (ref)
FR (1) FR2178984B1 (ref)
GB (1) GB1397684A (ref)
IT (1) IT981193B (ref)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158569A (ja) * 1989-11-15 1991-07-08 Misawa Homes Co Ltd 工業化住宅の施工用転落防止構造

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
NL7604986A (nl) * 1976-05-11 1977-11-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting, en inrichting vervaardigd door toe- passing van de werkwijze.
DE2751163C3 (de) * 1977-11-16 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur Steuerung einer offenen Gallium-Diffusion und Vorrichtung zur Durchführung desselben
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
JPS5614139U (ref) * 1979-07-14 1981-02-06
JPS6133636Y2 (ref) * 1981-01-29 1986-10-01
DE102012025429A1 (de) 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1444536C3 (de) * 1963-05-20 1975-03-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Diffusionsdotieren eines Silicium-Halbleiterkristalls

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158569A (ja) * 1989-11-15 1991-07-08 Misawa Homes Co Ltd 工業化住宅の施工用転落防止構造

Also Published As

Publication number Publication date
JPS4910666A (ref) 1974-01-30
FR2178984B1 (ref) 1978-03-03
DE2316520C3 (de) 1981-12-10
FR2178984A1 (ref) 1973-11-16
US3806382A (en) 1974-04-23
IT981193B (it) 1974-10-10
DE2316520B2 (de) 1980-11-27
DE2316520A1 (de) 1973-10-11
GB1397684A (en) 1975-06-18
CA980665A (en) 1975-12-30

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