IT981193B - Processo perfezionato per diffon dere impurita in un materiale semiconduttore - Google Patents

Processo perfezionato per diffon dere impurita in un materiale semiconduttore

Info

Publication number
IT981193B
IT981193B IT21302/73A IT2130273A IT981193B IT 981193 B IT981193 B IT 981193B IT 21302/73 A IT21302/73 A IT 21302/73A IT 2130273 A IT2130273 A IT 2130273A IT 981193 B IT981193 B IT 981193B
Authority
IT
Italy
Prior art keywords
impurities
differ
semiconductor material
process perfected
perfected
Prior art date
Application number
IT21302/73A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT981193B publication Critical patent/IT981193B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
IT21302/73A 1972-04-06 1973-03-08 Processo perfezionato per diffon dere impurita in un materiale semiconduttore IT981193B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00241821A US3806382A (en) 1972-04-06 1972-04-06 Vapor-solid impurity diffusion process

Publications (1)

Publication Number Publication Date
IT981193B true IT981193B (it) 1974-10-10

Family

ID=22912318

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21302/73A IT981193B (it) 1972-04-06 1973-03-08 Processo perfezionato per diffon dere impurita in un materiale semiconduttore

Country Status (7)

Country Link
US (1) US3806382A (it)
JP (1) JPS5321835B2 (it)
CA (1) CA980665A (it)
DE (1) DE2316520C3 (it)
FR (1) FR2178984B1 (it)
GB (1) GB1397684A (it)
IT (1) IT981193B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
NL7604986A (nl) * 1976-05-11 1977-11-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting, en inrichting vervaardigd door toe- passing van de werkwijze.
DE2751163C3 (de) * 1977-11-16 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur Steuerung einer offenen Gallium-Diffusion und Vorrichtung zur Durchführung desselben
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
JPS5614139U (it) * 1979-07-14 1981-02-06
JPS6133636Y2 (it) * 1981-01-29 1986-10-01
JPH03158569A (ja) * 1989-11-15 1991-07-08 Misawa Homes Co Ltd 工業化住宅の施工用転落防止構造
DE102012025429A1 (de) 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1444536C3 (de) * 1963-05-20 1975-03-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Diffusionsdotieren eines Silicium-Halbleiterkristalls

Also Published As

Publication number Publication date
DE2316520B2 (de) 1980-11-27
CA980665A (en) 1975-12-30
JPS4910666A (it) 1974-01-30
GB1397684A (en) 1975-06-18
FR2178984B1 (it) 1978-03-03
DE2316520A1 (de) 1973-10-11
JPS5321835B2 (it) 1978-07-05
FR2178984A1 (it) 1973-11-16
US3806382A (en) 1974-04-23
DE2316520C3 (de) 1981-12-10

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