JPS5319395B2 - - Google Patents

Info

Publication number
JPS5319395B2
JPS5319395B2 JP12401172A JP12401172A JPS5319395B2 JP S5319395 B2 JPS5319395 B2 JP S5319395B2 JP 12401172 A JP12401172 A JP 12401172A JP 12401172 A JP12401172 A JP 12401172A JP S5319395 B2 JPS5319395 B2 JP S5319395B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12401172A
Other languages
Japanese (ja)
Other versions
JPS4866978A (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4866978A publication Critical patent/JPS4866978A/ja
Publication of JPS5319395B2 publication Critical patent/JPS5319395B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
JP12401172A 1971-12-15 1972-12-12 Expired JPS5319395B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT32459/71A IT946150B (it) 1971-12-15 1971-12-15 Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza

Publications (2)

Publication Number Publication Date
JPS4866978A JPS4866978A (OSRAM) 1973-09-13
JPS5319395B2 true JPS5319395B2 (OSRAM) 1978-06-20

Family

ID=11235403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12401172A Expired JPS5319395B2 (OSRAM) 1971-12-15 1972-12-12

Country Status (7)

Country Link
US (1) US3885999A (OSRAM)
JP (1) JPS5319395B2 (OSRAM)
DE (1) DE2261541B2 (OSRAM)
ES (1) ES404807A1 (OSRAM)
FR (1) FR2163419B1 (OSRAM)
GB (1) GB1403012A (OSRAM)
IT (1) IT946150B (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127864A (en) * 1975-06-30 1978-11-28 U.S. Philips Corporation Semiconductor device
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
US4958210A (en) * 1976-07-06 1990-09-18 General Electric Company High voltage integrated circuits
US4092662A (en) * 1976-09-29 1978-05-30 Honeywell Inc. Sensistor apparatus
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS55112864U (OSRAM) * 1979-02-02 1980-08-08
US4416055A (en) * 1981-12-04 1983-11-22 Gte Laboratories Incorporated Method of fabricating a monolithic integrated circuit structure
US6372596B1 (en) * 1985-01-30 2002-04-16 Texas Instruments Incorporated Method of making horizontal bipolar transistor with insulated base structure
US4719185A (en) * 1986-04-28 1988-01-12 International Business Machines Corporation Method of making shallow junction complementary vertical bipolar transistor pair
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法
CN105513953B (zh) * 2015-12-25 2018-06-19 上海华虹宏力半导体制造有限公司 改善高压器件性能随衬底电阻率变化的工艺控制方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1074287A (en) * 1963-12-13 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3309537A (en) * 1964-11-27 1967-03-14 Honeywell Inc Multiple stage semiconductor circuits and integrated circuit stages
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor
JPS556287B1 (OSRAM) * 1966-04-27 1980-02-15
US3458781A (en) * 1966-07-18 1969-07-29 Unitrode Corp High-voltage planar semiconductor devices
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3474309A (en) * 1967-06-30 1969-10-21 Texas Instruments Inc Monolithic circuit with high q capacitor
US3473090A (en) * 1967-06-30 1969-10-14 Texas Instruments Inc Integrated circuit having matched complementary transistors
US3551221A (en) * 1967-11-29 1970-12-29 Nippon Electric Co Method of manufacturing a semiconductor integrated circuit
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US3736478A (en) * 1971-09-01 1973-05-29 Rca Corp Radio frequency transistor employing high and low-conductivity base grids

Also Published As

Publication number Publication date
US3885999A (en) 1975-05-27
JPS4866978A (OSRAM) 1973-09-13
DE2261541B2 (de) 1978-09-14
FR2163419A1 (OSRAM) 1973-07-27
ES404807A1 (es) 1975-06-16
DE2261541A1 (de) 1973-07-05
FR2163419B1 (OSRAM) 1977-04-01
GB1403012A (en) 1975-08-13
IT946150B (it) 1973-05-21

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