JPS5315731A - Temperature compensation device of semiconductor amplifier circuit operation point - Google Patents

Temperature compensation device of semiconductor amplifier circuit operation point

Info

Publication number
JPS5315731A
JPS5315731A JP9066276A JP9066276A JPS5315731A JP S5315731 A JPS5315731 A JP S5315731A JP 9066276 A JP9066276 A JP 9066276A JP 9066276 A JP9066276 A JP 9066276A JP S5315731 A JPS5315731 A JP S5315731A
Authority
JP
Japan
Prior art keywords
temperature compensation
operation point
amplifier circuit
semiconductor amplifier
compensation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9066276A
Other languages
Japanese (ja)
Inventor
Masanori Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9066276A priority Critical patent/JPS5315731A/en
Publication of JPS5315731A publication Critical patent/JPS5315731A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To secure a temperature compensation through a simple constitution at the operation point for various semiconductor amplifier circuits by giving the temperature characteristics of about -3,000PPM per 1 deg.C to the collector current of transistor Tr, and thus to utilize this temperature compensation effectively for a semiconductor IC.
JP9066276A 1976-07-28 1976-07-28 Temperature compensation device of semiconductor amplifier circuit operation point Pending JPS5315731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9066276A JPS5315731A (en) 1976-07-28 1976-07-28 Temperature compensation device of semiconductor amplifier circuit operation point

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9066276A JPS5315731A (en) 1976-07-28 1976-07-28 Temperature compensation device of semiconductor amplifier circuit operation point

Publications (1)

Publication Number Publication Date
JPS5315731A true JPS5315731A (en) 1978-02-14

Family

ID=14004734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9066276A Pending JPS5315731A (en) 1976-07-28 1976-07-28 Temperature compensation device of semiconductor amplifier circuit operation point

Country Status (1)

Country Link
JP (1) JPS5315731A (en)

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