JPS5314912B2 - - Google Patents

Info

Publication number
JPS5314912B2
JPS5314912B2 JP1791176A JP1791176A JPS5314912B2 JP S5314912 B2 JPS5314912 B2 JP S5314912B2 JP 1791176 A JP1791176 A JP 1791176A JP 1791176 A JP1791176 A JP 1791176A JP S5314912 B2 JPS5314912 B2 JP S5314912B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1791176A
Other languages
Japanese (ja)
Other versions
JPS52101967A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1791176A priority Critical patent/JPS52101967A/ja
Priority to US05/770,605 priority patent/US4073055A/en
Publication of JPS52101967A publication Critical patent/JPS52101967A/ja
Publication of JPS5314912B2 publication Critical patent/JPS5314912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Weting (AREA)
  • Dicing (AREA)
JP1791176A 1976-02-23 1976-02-23 Semiconductor device Granted JPS52101967A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1791176A JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device
US05/770,605 US4073055A (en) 1976-02-23 1977-02-22 Method for manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1791176A JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52101967A JPS52101967A (en) 1977-08-26
JPS5314912B2 true JPS5314912B2 (es) 1978-05-20

Family

ID=11956923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1791176A Granted JPS52101967A (en) 1976-02-23 1976-02-23 Semiconductor device

Country Status (2)

Country Link
US (1) US4073055A (es)
JP (1) JPS52101967A (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232018B2 (es) * 1978-12-01 1987-07-11 Hoogovens Groep Bv

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126936A (en) * 1980-03-12 1981-10-05 Toshiba Corp Semiconductor device and production thereof
US4485264A (en) * 1982-11-09 1984-11-27 Energy Conversion Devices, Inc. Isolation layer for photovoltaic device and method of producing same
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
JPS62502498A (ja) * 1985-04-08 1987-09-24 エスジ−エス・セミコンダクタ−・コ−ポレ−ション ウェ−ハにプロ−ブを位置合わせするためのタ−ゲットキ−
KR100287919B1 (ko) * 1992-01-06 2001-05-02 사토 게니치로 더미 패턴을 갖는 반도체 칩
JPH05335529A (ja) * 1992-05-28 1993-12-17 Fujitsu Ltd 半導体装置およびその製造方法
JPH0888201A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd サファイアを基板とする半導体素子
US6022792A (en) 1996-03-13 2000-02-08 Seiko Instruments, Inc. Semiconductor dicing and assembling method
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
US7183137B2 (en) * 2003-12-01 2007-02-27 Taiwan Semiconductor Manufacturing Company Method for dicing semiconductor wafers
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
JP2008218656A (ja) * 2007-03-02 2008-09-18 Denso Corp 半導体装置の製造方法及び半導体ウエハ
CN104108139B (zh) * 2013-04-18 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种mems晶圆的切割方法
CN105453250A (zh) * 2013-08-08 2016-03-30 夏普株式会社 半导体元件衬底及其制造方法
CN111524836B (zh) * 2019-02-13 2021-08-27 长江存储科技有限责任公司 用于在半导体制造中定位图案的标记

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3608186A (en) * 1969-10-30 1971-09-28 Jearld L Hutson Semiconductor device manufacture with junction passivation
US3903591A (en) * 1971-09-22 1975-09-09 Siemens Ag Semiconductor arrangement
US3965568A (en) * 1973-08-27 1976-06-29 Texas Instruments Incorporated Process for fabrication and assembly of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232018B2 (es) * 1978-12-01 1987-07-11 Hoogovens Groep Bv

Also Published As

Publication number Publication date
JPS52101967A (en) 1977-08-26
US4073055A (en) 1978-02-14

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