JPS5314584A - Forming method for mosic and bipolar ic on one semiconductor substrate - Google Patents

Forming method for mosic and bipolar ic on one semiconductor substrate

Info

Publication number
JPS5314584A
JPS5314584A JP8815476A JP8815476A JPS5314584A JP S5314584 A JPS5314584 A JP S5314584A JP 8815476 A JP8815476 A JP 8815476A JP 8815476 A JP8815476 A JP 8815476A JP S5314584 A JPS5314584 A JP S5314584A
Authority
JP
Japan
Prior art keywords
bipolar
mosic
semiconductor substrate
forming method
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8815476A
Other languages
Japanese (ja)
Inventor
Yuji Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8815476A priority Critical patent/JPS5314584A/en
Publication of JPS5314584A publication Critical patent/JPS5314584A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To form circuits which make linear and digital operations in one semiconductor chip by forming a bipolar element through the use of a part of wells for MOS element forming and directly using the base-emitter diffusion of the bipolar element also for MOS element region diffusion.
COPYRIGHT: (C)1978,JPO&Japio
JP8815476A 1976-07-26 1976-07-26 Forming method for mosic and bipolar ic on one semiconductor substrate Pending JPS5314584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8815476A JPS5314584A (en) 1976-07-26 1976-07-26 Forming method for mosic and bipolar ic on one semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8815476A JPS5314584A (en) 1976-07-26 1976-07-26 Forming method for mosic and bipolar ic on one semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5314584A true JPS5314584A (en) 1978-02-09

Family

ID=13934999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8815476A Pending JPS5314584A (en) 1976-07-26 1976-07-26 Forming method for mosic and bipolar ic on one semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5314584A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564269A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS5885362U (en) * 1981-12-07 1983-06-09 株式会社日立製作所 semiconductor integrated device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564269A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS5885362U (en) * 1981-12-07 1983-06-09 株式会社日立製作所 semiconductor integrated device

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