JPS5314474B2 - - Google Patents
Info
- Publication number
- JPS5314474B2 JPS5314474B2 JP5926674A JP5926674A JPS5314474B2 JP S5314474 B2 JPS5314474 B2 JP S5314474B2 JP 5926674 A JP5926674 A JP 5926674A JP 5926674 A JP5926674 A JP 5926674A JP S5314474 B2 JPS5314474 B2 JP S5314474B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
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- H10W72/20—
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- H10W72/90—
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- H10W72/073—
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- H10W72/352—
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- H10W72/59—
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- H10W72/944—
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00363881A US3836995A (en) | 1973-05-25 | 1973-05-25 | Semiconductor darlington circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5022585A JPS5022585A (cg-RX-API-DMAC10.html) | 1975-03-11 |
| JPS5314474B2 true JPS5314474B2 (cg-RX-API-DMAC10.html) | 1978-05-17 |
Family
ID=23432117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5926674A Expired JPS5314474B2 (cg-RX-API-DMAC10.html) | 1973-05-25 | 1974-05-24 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3836995A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5314474B2 (cg-RX-API-DMAC10.html) |
| BE (1) | BE815524A (cg-RX-API-DMAC10.html) |
| CA (1) | CA993116A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2424251A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2231115B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1450750A (cg-RX-API-DMAC10.html) |
| IT (1) | IT1010295B (cg-RX-API-DMAC10.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4072981A (en) * | 1975-03-25 | 1978-02-07 | Texas Instruments Incorporated | Fast switching Darlington circuit |
| JPS5522765Y2 (cg-RX-API-DMAC10.html) * | 1975-04-25 | 1980-05-30 | ||
| JPS5227277A (en) * | 1975-08-25 | 1977-03-01 | Origin Electric Co Ltd | Darlington connction type semiconductor unit |
| US4136355A (en) * | 1976-02-10 | 1979-01-23 | Matsushita Electronics Corporation | Darlington transistor |
| JPS5950109B2 (ja) * | 1976-07-12 | 1984-12-06 | 日本電気株式会社 | 半導体装置 |
| US4225874A (en) * | 1978-03-09 | 1980-09-30 | Rca Corporation | Semiconductor device having integrated diode |
| NL7902632A (nl) * | 1979-04-04 | 1980-10-07 | Philips Nv | Transistorschakelaar. |
| US4253105A (en) * | 1980-07-03 | 1981-02-24 | Rca Corporation | Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device |
| IT1221867B (it) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764455C3 (de) * | 1968-06-08 | 1980-02-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte Darlington-Transistorschaltung |
| US3624454A (en) * | 1969-09-15 | 1971-11-30 | Gen Motors Corp | Mesa-type semiconductor device |
| US3755722A (en) * | 1972-09-28 | 1973-08-28 | Gen Motors Corp | Resistor isolation for double mesa transistors |
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1973
- 1973-05-25 US US00363881A patent/US3836995A/en not_active Expired - Lifetime
-
1974
- 1974-04-30 IT IT22141/74A patent/IT1010295B/it active
- 1974-05-15 CA CA200,035A patent/CA993116A/en not_active Expired
- 1974-05-17 GB GB2203574A patent/GB1450750A/en not_active Expired
- 1974-05-17 FR FR7417314A patent/FR2231115B1/fr not_active Expired
- 1974-05-18 DE DE2424251A patent/DE2424251A1/de active Pending
- 1974-05-24 JP JP5926674A patent/JPS5314474B2/ja not_active Expired
- 1974-05-24 BE BE144741A patent/BE815524A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5022585A (cg-RX-API-DMAC10.html) | 1975-03-11 |
| FR2231115B1 (cg-RX-API-DMAC10.html) | 1978-11-24 |
| DE2424251A1 (de) | 1974-12-12 |
| GB1450750A (en) | 1976-09-29 |
| BE815524A (fr) | 1974-09-16 |
| CA993116A (en) | 1976-07-13 |
| FR2231115A1 (cg-RX-API-DMAC10.html) | 1974-12-20 |
| US3836995A (en) | 1974-09-17 |
| IT1010295B (it) | 1977-01-10 |