JPS53139475A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS53139475A
JPS53139475A JP5386277A JP5386277A JPS53139475A JP S53139475 A JPS53139475 A JP S53139475A JP 5386277 A JP5386277 A JP 5386277A JP 5386277 A JP5386277 A JP 5386277A JP S53139475 A JPS53139475 A JP S53139475A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
charge signal
inputting
continues
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5386277A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Susumu Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5386277A priority Critical patent/JPS53139475A/en
Publication of JPS53139475A publication Critical patent/JPS53139475A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make logical amplitude large by inputting a few charges filling an interfacial level only when charge signal ''1'' continues after non-charge signal ''0''.
JP5386277A 1977-05-11 1977-05-11 Charge transfer device Pending JPS53139475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5386277A JPS53139475A (en) 1977-05-11 1977-05-11 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5386277A JPS53139475A (en) 1977-05-11 1977-05-11 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS53139475A true JPS53139475A (en) 1978-12-05

Family

ID=12954572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5386277A Pending JPS53139475A (en) 1977-05-11 1977-05-11 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS53139475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221852A (en) * 1991-02-01 1993-06-22 Fujitsu Limited Charge coupled device and method of producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221852A (en) * 1991-02-01 1993-06-22 Fujitsu Limited Charge coupled device and method of producing the same

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