JPS53132286A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS53132286A
JPS53132286A JP4704777A JP4704777A JPS53132286A JP S53132286 A JPS53132286 A JP S53132286A JP 4704777 A JP4704777 A JP 4704777A JP 4704777 A JP4704777 A JP 4704777A JP S53132286 A JPS53132286 A JP S53132286A
Authority
JP
Japan
Prior art keywords
charge transfer
transfer device
electrode
collaboration
devise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4704777A
Other languages
Japanese (ja)
Inventor
Yoshiaki Hagiwara
Yasuo Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4704777A priority Critical patent/JPS53132286A/en
Publication of JPS53132286A publication Critical patent/JPS53132286A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To devise a potential well asymmetrical with respect to the charge transfer direction with collaboration of transfer electrode and bias electrode so as to be applicable to solid-state image pickup device or the like.
JP4704777A 1977-04-22 1977-04-22 Charge transfer device Pending JPS53132286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4704777A JPS53132286A (en) 1977-04-22 1977-04-22 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4704777A JPS53132286A (en) 1977-04-22 1977-04-22 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS53132286A true JPS53132286A (en) 1978-11-17

Family

ID=12764245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4704777A Pending JPS53132286A (en) 1977-04-22 1977-04-22 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS53132286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0358479A (en) * 1989-07-26 1991-03-13 Matsushita Electron Corp Solid-state image sensing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0358479A (en) * 1989-07-26 1991-03-13 Matsushita Electron Corp Solid-state image sensing device

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